Heteroepitaxy and the performance of CIGS solar cells

Sang Ho Song; Stephen A. Campbell

doi:10.1109/PVSC.2013.6744991

Heteroepitaxy and the performance of CIGS solar cells

Sang Ho Song
, Stephen A. Campbell

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Scopus citations

Abstract

The preferred orientation of CIGS is related to the crystal structure of the bottom MoSe₂ layer. The lattice mismatch of chalcopyrite (220) CIGS to hexagonal (102) MoSe₂ is lower than other orientations. The lattice mismatch depends on the Ga composition x, reaching a minimum at x=0.35. 2D dislocation and trap densities were calculated as a function of lattice mismatch for various compositions. In good agreement with experiment, the best performance CIGS solar cell was obtained at x=0.35 in this numerical device simulation. The lattice mismatch between CIGS and hexagonal CdS can also lead to 2D dislocations in CdS at the top CIGS interface. Interface traps saturate the open circuit voltage at high Ga composition by a thermionic emission transport mechanism. These models well explain observed CIGS solar cell performance over the full range of Ga compositions.

Original language	English (US)
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2534-2539
Number of pages	6
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744991
State	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: Jun 16 2013 → Jun 21 2013

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	6/16/13 → 6/21/13

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CIGS
CdS
Device simulation
Dislocation spacing
Heteroepitaxy
Lattice mismatch

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10.1109/PVSC.2013.6744991

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Heteroepitaxy and the performance of CIGS solar cells. / Song, Sang Ho; Campbell, Stephen A.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2534-2539 6744991 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Song, SH & Campbell, SA 2013, Heteroepitaxy and the performance of CIGS solar cells. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744991, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2534-2539, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744991

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title = "Heteroepitaxy and the performance of CIGS solar cells",

abstract = "The preferred orientation of CIGS is related to the crystal structure of the bottom MoSe2 layer. The lattice mismatch of chalcopyrite (220) CIGS to hexagonal (102) MoSe2 is lower than other orientations. The lattice mismatch depends on the Ga composition x, reaching a minimum at x=0.35. 2D dislocation and trap densities were calculated as a function of lattice mismatch for various compositions. In good agreement with experiment, the best performance CIGS solar cell was obtained at x=0.35 in this numerical device simulation. The lattice mismatch between CIGS and hexagonal CdS can also lead to 2D dislocations in CdS at the top CIGS interface. Interface traps saturate the open circuit voltage at high Ga composition by a thermionic emission transport mechanism. These models well explain observed CIGS solar cell performance over the full range of Ga compositions.",

keywords = "CIGS, CdS, Device simulation, Dislocation spacing, Heteroepitaxy, Lattice mismatch",

author = "Song, \{Sang Ho\} and Campbell, \{Stephen A.\}",

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AU - Campbell, Stephen A.

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AB - The preferred orientation of CIGS is related to the crystal structure of the bottom MoSe2 layer. The lattice mismatch of chalcopyrite (220) CIGS to hexagonal (102) MoSe2 is lower than other orientations. The lattice mismatch depends on the Ga composition x, reaching a minimum at x=0.35. 2D dislocation and trap densities were calculated as a function of lattice mismatch for various compositions. In good agreement with experiment, the best performance CIGS solar cell was obtained at x=0.35 in this numerical device simulation. The lattice mismatch between CIGS and hexagonal CdS can also lead to 2D dislocations in CdS at the top CIGS interface. Interface traps saturate the open circuit voltage at high Ga composition by a thermionic emission transport mechanism. These models well explain observed CIGS solar cell performance over the full range of Ga compositions.

KW - CIGS

KW - CdS

KW - Device simulation

KW - Dislocation spacing

KW - Heteroepitaxy

KW - Lattice mismatch

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ER -

Heteroepitaxy and the performance of CIGS solar cells

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UN SDGs

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