Heteroepitaxial growth of Cu2O thin film on ZnO by metal organic chemical vapor deposition

SeongHo Jeong, Eray S. Aydil

Research output: Contribution to journalArticlepeer-review

94 Scopus citations


Cuprous oxide (Cu2O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C5HF6O2)2] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu2O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)Cu2O∥(0 0 0 2)ZnO; [0 0 1]Cu2O∥[1 2̄ 1 0]ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p-n junction solar cells or diodes.

Original languageEnglish (US)
Pages (from-to)4188-4192
Number of pages5
JournalJournal of Crystal Growth
Issue number17
StatePublished - Aug 15 2009

Bibliographical note

Funding Information:
This work was supported partially by the MRSEC Program of the National Science Foundation under Award Number DMR-0819885. Part of this work were carried out in the Institute of Technology Characterization Facility, University of Minnesota, which has received capital equipment funding from the NSF through the MRSEC, ERC and MRI programs. Part of this work was carried out in the Institute of Technology Nanofabrication Center, University of Minnesota, which receives partial support from NSF through the NNIN program. SeongHo Jeong was supported by a Samsung Fellowship.


  • A1. X-ray diffraction
  • A3. Metal organic chemical vapor deposition
  • A3. Solid phase epitaxy
  • B1. Oxides
  • B2. Semiconducting materials
  • B3. Heterojunction semiconductor devices


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