Cuprous oxide (Cu2O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C5HF6O2)2] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu2O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)Cu2O∥(0 0 0 2)ZnO; [0 0 1]Cu2O∥[1 2̄ 1 0]ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p-n junction solar cells or diodes.
Bibliographical noteFunding Information:
This work was supported partially by the MRSEC Program of the National Science Foundation under Award Number DMR-0819885. Part of this work were carried out in the Institute of Technology Characterization Facility, University of Minnesota, which has received capital equipment funding from the NSF through the MRSEC, ERC and MRI programs. Part of this work was carried out in the Institute of Technology Nanofabrication Center, University of Minnesota, which receives partial support from NSF through the NNIN program. SeongHo Jeong was supported by a Samsung Fellowship.
- A1. X-ray diffraction
- A3. Metal organic chemical vapor deposition
- A3. Solid phase epitaxy
- B1. Oxides
- B2. Semiconducting materials
- B3. Heterojunction semiconductor devices