Heavy-Metal-Free, Low-Damping, and Non-Interface Perpendicular Fe16N2 Thin Film and Magnetoresistance Device

Xuan Li, Meiyin Yang, Mahdi Jamali, Fengyuan Shi, Shishou Kang, Yanfeng Jiang, Xiaowei Zhang, Hongshi Li, Sergey Okatov, Sergey Faleev, Alan Kalitsov, Guanghua Yu, Paul M. Voyles, Oleg N. Mryasov, Jian Ping Wang

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Realization of sub-10 nm spin-based logic and memory devices relies on the development of magnetic materials with perpendicular magnetic anisotropy that can provide low switching current and large thermal stability simultaneously. In this work, the authors report on one promising candidate, Fe16N2, a heavy-metal-free, non-interface perpendicular magnetic material and demonstrate a perpendicularly magnetized current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) device based on Fe16N2. The crystalline-based perpendicular anisotropy of Fe16N2 in the CPP GMR device is measured to be about 1.9 × 106 J m−3 (1.9 × 107 erg cm−3), which is sufficient to maintain the thermal stability of sub-10 nm devices. A first principle calculation is performed to support this large magnitude of the perpendicular anisotropy. Moreover, the Gilbert damping constant of the Fe16N2 thin film (α ≈0.01) measured by ferromagnetic resonance (FMR) is lower than for most existing materials with crystalline perpendicular magnetic anisotropy. The non-interface perpendicular anisotropy and low damping properties of Fe16N2 may offer a pathway for future spintronics logic and memory devices.

Original languageEnglish (US)
Article number1900089
JournalPhysica Status Solidi - Rapid Research Letters
Issue number7
StatePublished - Jul 2019


  • FeN
  • damping constant
  • giant magnetoresistance
  • perpendicular magnetic anisotropy
  • spintronic devices

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    Li, X., Yang, M., Jamali, M., Shi, F., Kang, S., Jiang, Y., Zhang, X., Li, H., Okatov, S., Faleev, S., Kalitsov, A., Yu, G., Voyles, P. M., Mryasov, O. N., & Wang, J. P. (2019). Heavy-Metal-Free, Low-Damping, and Non-Interface Perpendicular Fe16N2 Thin Film and Magnetoresistance Device. Physica Status Solidi - Rapid Research Letters, 13(7), [1900089]. https://doi.org/10.1002/pssr.201900089