Heavy-Metal-Free, Low-Damping, and Non-Interface Perpendicular Fe16N2 Thin Film and Magnetoresistance Device

Xuan Li; Meiyin Yang; Mahdi Jamali; Fengyuan Shi; Shishou Kang; Yanfeng Jiang; Xiaowei Zhang; Hongshi Li; Sergey Okatov; Sergey Faleev; Alan Kalitsov; Guanghua Yu; Paul M. Voyles; Oleg N. Mryasov; Jian Ping Wang

doi:10.1002/pssr.201900089

Heavy-Metal-Free, Low-Damping, and Non-Interface Perpendicular Fe₁₆N₂ Thin Film and Magnetoresistance Device

Xuan Li, Meiyin Yang, Mahdi Jamali, Fengyuan Shi, Shishou Kang, Yanfeng Jiang, Xiaowei Zhang, Hongshi Li, Sergey Okatov, Sergey Faleev, Alan Kalitsov, Guanghua Yu, Paul M. Voyles, Oleg N. Mryasov, Jian Ping Wang

Electrical and Computer Engineering

Research output: Contribution to journal › Letter › peer-review

4 Scopus citations

Abstract

Realization of sub-10 nm spin-based logic and memory devices relies on the development of magnetic materials with perpendicular magnetic anisotropy that can provide low switching current and large thermal stability simultaneously. In this work, the authors report on one promising candidate, Fe₁₆N₂, a heavy-metal-free, non-interface perpendicular magnetic material and demonstrate a perpendicularly magnetized current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) device based on Fe₁₆N₂. The crystalline-based perpendicular anisotropy of Fe₁₆N₂ in the CPP GMR device is measured to be about 1.9 × 10⁶ J m⁻³ (1.9 × 10⁷ erg cm⁻³), which is sufficient to maintain the thermal stability of sub-10 nm devices. A first principle calculation is performed to support this large magnitude of the perpendicular anisotropy. Moreover, the Gilbert damping constant of the Fe₁₆N₂ thin film (α ≈0.01) measured by ferromagnetic resonance (FMR) is lower than for most existing materials with crystalline perpendicular magnetic anisotropy. The non-interface perpendicular anisotropy and low damping properties of Fe₁₆N₂ may offer a pathway for future spintronics logic and memory devices.

Original language	English (US)
Article number	1900089
Journal	Physica Status Solidi - Rapid Research Letters
Volume	13
Issue number	7
DOIs	https://doi.org/10.1002/pssr.201900089
State	Published - Jul 2019

Bibliographical note

Funding Information:
X.L. and M.Y. contributed equally to this work. This work was partially supported by the DOE ARPA-E rare-earth-free magnet program and later the C-SPIN center, one of six STARnet program research centers, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA. Device fabrication was performed at the University of Minnesota Nanofabrication Center, which receives support from the National Science Foundation (NSF) through the National Nanotechnology Infrastructure Network program. Thin film characterization was performed at the University of Minnesota Characterization Facility, which has received capital equipment funding from the NSF through the Materials Research Science and Engineering Center. M.Y. thanks the support of China Scholar Council visiting Program.

Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

FeN
damping constant
giant magnetoresistance
perpendicular magnetic anisotropy
spintronic devices

Publisher link

10.1002/pssr.201900089

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Cite this

Li, X., Yang, M., Jamali, M., Shi, F., Kang, S., Jiang, Y., Zhang, X., Li, H., Okatov, S., Faleev, S., Kalitsov, A., Yu, G., Voyles, P. M., Mryasov, O. N., & Wang, J. P. (2019). Heavy-Metal-Free, Low-Damping, and Non-Interface Perpendicular Fe₁₆N₂ Thin Film and Magnetoresistance Device. Physica Status Solidi - Rapid Research Letters, 13(7), [1900089]. https://doi.org/10.1002/pssr.201900089

Heavy-Metal-Free, Low-Damping, and Non-Interface Perpendicular Fe₁₆N₂ Thin Film and Magnetoresistance Device. / Li, Xuan; Yang, Meiyin; Jamali, Mahdi; Shi, Fengyuan; Kang, Shishou; Jiang, Yanfeng; Zhang, Xiaowei; Li, Hongshi; Okatov, Sergey; Faleev, Sergey; Kalitsov, Alan; Yu, Guanghua; Voyles, Paul M.; Mryasov, Oleg N.; Wang, Jian Ping.

In: Physica Status Solidi - Rapid Research Letters, Vol. 13, No. 7, 1900089, 07.2019.

Research output: Contribution to journal › Letter › peer-review

Li, X, Yang, M, Jamali, M, Shi, F, Kang, S, Jiang, Y, Zhang, X, Li, H, Okatov, S, Faleev, S, Kalitsov, A, Yu, G, Voyles, PM, Mryasov, ON & Wang, JP 2019, 'Heavy-Metal-Free, Low-Damping, and Non-Interface Perpendicular Fe₁₆N₂ Thin Film and Magnetoresistance Device', Physica Status Solidi - Rapid Research Letters, vol. 13, no. 7, 1900089. https://doi.org/10.1002/pssr.201900089

Li, Xuan ; Yang, Meiyin ; Jamali, Mahdi ; Shi, Fengyuan ; Kang, Shishou ; Jiang, Yanfeng ; Zhang, Xiaowei ; Li, Hongshi ; Okatov, Sergey ; Faleev, Sergey ; Kalitsov, Alan ; Yu, Guanghua ; Voyles, Paul M. ; Mryasov, Oleg N. ; Wang, Jian Ping. / Heavy-Metal-Free, Low-Damping, and Non-Interface Perpendicular Fe₁₆N₂ Thin Film and Magnetoresistance Device. In: Physica Status Solidi - Rapid Research Letters. 2019 ; Vol. 13, No. 7.

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abstract = "Realization of sub-10 nm spin-based logic and memory devices relies on the development of magnetic materials with perpendicular magnetic anisotropy that can provide low switching current and large thermal stability simultaneously. In this work, the authors report on one promising candidate, Fe16N2, a heavy-metal-free, non-interface perpendicular magnetic material and demonstrate a perpendicularly magnetized current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) device based on Fe16N2. The crystalline-based perpendicular anisotropy of Fe16N2 in the CPP GMR device is measured to be about 1.9 × 106 J m−3 (1.9 × 107 erg cm−3), which is sufficient to maintain the thermal stability of sub-10 nm devices. A first principle calculation is performed to support this large magnitude of the perpendicular anisotropy. Moreover, the Gilbert damping constant of the Fe16N2 thin film (α ≈0.01) measured by ferromagnetic resonance (FMR) is lower than for most existing materials with crystalline perpendicular magnetic anisotropy. The non-interface perpendicular anisotropy and low damping properties of Fe16N2 may offer a pathway for future spintronics logic and memory devices.",

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AU - Li, Xuan

AU - Yang, Meiyin

AU - Jamali, Mahdi

AU - Shi, Fengyuan

AU - Kang, Shishou

AU - Jiang, Yanfeng

AU - Zhang, Xiaowei

AU - Li, Hongshi

AU - Okatov, Sergey

AU - Faleev, Sergey

AU - Kalitsov, Alan

AU - Yu, Guanghua

AU - Voyles, Paul M.

AU - Mryasov, Oleg N.

AU - Wang, Jian Ping

N1 - Funding Information: X.L. and M.Y. contributed equally to this work. This work was partially supported by the DOE ARPA-E rare-earth-free magnet program and later the C-SPIN center, one of six STARnet program research centers, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA. Device fabrication was performed at the University of Minnesota Nanofabrication Center, which receives support from the National Science Foundation (NSF) through the National Nanotechnology Infrastructure Network program. Thin film characterization was performed at the University of Minnesota Characterization Facility, which has received capital equipment funding from the NSF through the Materials Research Science and Engineering Center. M.Y. thanks the support of China Scholar Council visiting Program. Publisher Copyright: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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N2 - Realization of sub-10 nm spin-based logic and memory devices relies on the development of magnetic materials with perpendicular magnetic anisotropy that can provide low switching current and large thermal stability simultaneously. In this work, the authors report on one promising candidate, Fe16N2, a heavy-metal-free, non-interface perpendicular magnetic material and demonstrate a perpendicularly magnetized current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) device based on Fe16N2. The crystalline-based perpendicular anisotropy of Fe16N2 in the CPP GMR device is measured to be about 1.9 × 106 J m−3 (1.9 × 107 erg cm−3), which is sufficient to maintain the thermal stability of sub-10 nm devices. A first principle calculation is performed to support this large magnitude of the perpendicular anisotropy. Moreover, the Gilbert damping constant of the Fe16N2 thin film (α ≈0.01) measured by ferromagnetic resonance (FMR) is lower than for most existing materials with crystalline perpendicular magnetic anisotropy. The non-interface perpendicular anisotropy and low damping properties of Fe16N2 may offer a pathway for future spintronics logic and memory devices.

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