Hall field-induced resistance oscillations in a p -type Ge/SiGe quantum well

Q. Shi, Q. A. Ebner, M. A. Zudov

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Abstract

We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high-frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits a pronounced maximum at a magnetic field which increases linearly with the applied current. We associate this maximum with the fundamental peak of Hall field-induced resistance oscillations (HIRO) which are known to occur in 2D electron gases in GaAs/AlGaAs systems. After taking into account the Dingle factor correction, we find that the position of the HIRO peak is well described by the hole effective mass m≈0.09m0, obtained from microwave photoresistance in the same sample.

Original languageEnglish (US)
Article number161301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number16
DOIs
StatePublished - Oct 1 2014

Bibliographical note

Publisher Copyright:
© 2014 American Physical Society.

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