Hafnium oxide gate dielectrics on sulfur-passivated germanium

Martin M. Frank; Steven J. Koester; Matthew Copel; John A. Ott; Vamsi K. Paruchuri; Hulling Shang; Rainer Loesing

doi:10.1063/1.2338751

Hafnium oxide gate dielectrics on sulfur-passivated germanium

Martin M. Frank
, Steven J. Koester
, Matthew Copel
, John A. Ott
, Vamsi K. Paruchuri
, Hulling Shang
, Rainer Loesing

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

135 Scopus citations

Abstract

Sulfur passivation of Ge(100) is achieved using aqueous ammonium sulfide (NH₄)₂S(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ dielectric material HfO ₂ when sufficiently low growth temperatures (e.g., 220°C) are employed. Oxygen incorporation is moderate and results in an electrically passivating GeOS interface layer. The HfO₂/GeOS/Ge gate stack exhibits lower fixed charge and interface state density than a more conventional HfO₂/GeON/Ge gate stack fabricated via an ammonia gas treatment.

Original language	English (US)
Article number	112905
Journal	Applied Physics Letters
Volume	89
Issue number	11
DOIs	https://doi.org/10.1063/1.2338751
State	Published - 2006

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10.1063/1.2338751

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title = "Hafnium oxide gate dielectrics on sulfur-passivated germanium",

abstract = "Sulfur passivation of Ge(100) is achieved using aqueous ammonium sulfide (NH4)2S(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ dielectric material HfO 2 when sufficiently low growth temperatures (e.g., 220°C) are employed. Oxygen incorporation is moderate and results in an electrically passivating GeOS interface layer. The HfO2/GeOS/Ge gate stack exhibits lower fixed charge and interface state density than a more conventional HfO2/GeON/Ge gate stack fabricated via an ammonia gas treatment.",

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year = "2006",

doi = "10.1063/1.2338751",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

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T1 - Hafnium oxide gate dielectrics on sulfur-passivated germanium

AU - Frank, Martin M.

AU - Koester, Steven J.

AU - Copel, Matthew

AU - Ott, John A.

AU - Paruchuri, Vamsi K.

AU - Shang, Hulling

AU - Loesing, Rainer

PY - 2006

Y1 - 2006

N2 - Sulfur passivation of Ge(100) is achieved using aqueous ammonium sulfide (NH4)2S(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ dielectric material HfO 2 when sufficiently low growth temperatures (e.g., 220°C) are employed. Oxygen incorporation is moderate and results in an electrically passivating GeOS interface layer. The HfO2/GeOS/Ge gate stack exhibits lower fixed charge and interface state density than a more conventional HfO2/GeON/Ge gate stack fabricated via an ammonia gas treatment.

AB - Sulfur passivation of Ge(100) is achieved using aqueous ammonium sulfide (NH4)2S(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ dielectric material HfO 2 when sufficiently low growth temperatures (e.g., 220°C) are employed. Oxygen incorporation is moderate and results in an electrically passivating GeOS interface layer. The HfO2/GeOS/Ge gate stack exhibits lower fixed charge and interface state density than a more conventional HfO2/GeON/Ge gate stack fabricated via an ammonia gas treatment.

UR - https://www.scopus.com/pages/publications/33748710656

UR - https://www.scopus.com/pages/publications/33748710656#tab=citedBy

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DO - 10.1063/1.2338751

M3 - Article

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SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112905

ER -

Hafnium oxide gate dielectrics on sulfur-passivated germanium

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