Hafnium oxide gate dielectrics on sulfur-passivated germanium

Martin M. Frank; Steven J. Koester; Matthew Copel; John A. Ott; Vamsi K. Paruchuri; Hulling Shang; Rainer Loesing

doi:10.1063/1.2338751

Hafnium oxide gate dielectrics on sulfur-passivated germanium

Martin M. Frank, Steven J. Koester, Matthew Copel, John A. Ott, Vamsi K. Paruchuri, Hulling Shang, Rainer Loesing

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

133 Scopus citations

Abstract

Sulfur passivation of Ge(100) is achieved using aqueous ammonium sulfide (NH₄)₂S(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ dielectric material HfO ₂ when sufficiently low growth temperatures (e.g., 220°C) are employed. Oxygen incorporation is moderate and results in an electrically passivating GeOS interface layer. The HfO₂/GeOS/Ge gate stack exhibits lower fixed charge and interface state density than a more conventional HfO₂/GeON/Ge gate stack fabricated via an ammonia gas treatment.

Original language	English (US)
Article number	112905
Journal	Applied Physics Letters
Volume	89
Issue number	11
DOIs	https://doi.org/10.1063/1.2338751
State	Published - 2006

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title = "Hafnium oxide gate dielectrics on sulfur-passivated germanium",

abstract = "Sulfur passivation of Ge(100) is achieved using aqueous ammonium sulfide (NH4)2S(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ dielectric material HfO 2 when sufficiently low growth temperatures (e.g., 220°C) are employed. Oxygen incorporation is moderate and results in an electrically passivating GeOS interface layer. The HfO2/GeOS/Ge gate stack exhibits lower fixed charge and interface state density than a more conventional HfO2/GeON/Ge gate stack fabricated via an ammonia gas treatment.",

author = "Frank, {Martin M.} and Koester, {Steven J.} and Matthew Copel and Ott, {John A.} and Paruchuri, {Vamsi K.} and Hulling Shang and Rainer Loesing",

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language = "English (US)",

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journal = "Applied Physics Letters",

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AU - Frank, Martin M.

AU - Koester, Steven J.

AU - Copel, Matthew

AU - Ott, John A.

AU - Paruchuri, Vamsi K.

AU - Shang, Hulling

AU - Loesing, Rainer

PY - 2006

Y1 - 2006

N2 - Sulfur passivation of Ge(100) is achieved using aqueous ammonium sulfide (NH4)2S(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ dielectric material HfO 2 when sufficiently low growth temperatures (e.g., 220°C) are employed. Oxygen incorporation is moderate and results in an electrically passivating GeOS interface layer. The HfO2/GeOS/Ge gate stack exhibits lower fixed charge and interface state density than a more conventional HfO2/GeON/Ge gate stack fabricated via an ammonia gas treatment.

AB - Sulfur passivation of Ge(100) is achieved using aqueous ammonium sulfide (NH4)2S(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ dielectric material HfO 2 when sufficiently low growth temperatures (e.g., 220°C) are employed. Oxygen incorporation is moderate and results in an electrically passivating GeOS interface layer. The HfO2/GeOS/Ge gate stack exhibits lower fixed charge and interface state density than a more conventional HfO2/GeON/Ge gate stack fabricated via an ammonia gas treatment.

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ER -

Hafnium oxide gate dielectrics on sulfur-passivated germanium

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