Growth temperature controlled magnetism in molecular beam epitaxially grown Ni2MnAl Heusler alloy

X. Y. Dong, J. W. Dong, J. Q. Xie, T. C. Shih, S. McKernan, C. Leighton, C. J. Palmstrøm

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

Single crystal Heusler alloy Ni2MnAl thin films have been grown by molecular beam epitaxy on GaAs (0 0 1) using Sc0.3Er0.7As interlayers. The effect of growth temperature on the structural and magnetic properties was studied. Films grown at lower temperatures were non-ferromagnetic with a B2-like crystal structure; while higher growth temperature (400 °C) resulted in ferromagnetic films suggesting a L21-like structure. Exchange bias was detected in Ni2MnAl/Ni2MnGe (ferromagnetic) and Co/Ni2MnAl bilayers, suggesting that the Ni2MnAl films grown at 180 °C (in the B2-like structure) are antiferromagnetically ordered.

Original languageEnglish (US)
Pages (from-to)384-389
Number of pages6
JournalJournal of Crystal Growth
Volume254
Issue number3-4
DOIs
StatePublished - Jul 2003

Bibliographical note

Funding Information:
Acknowledgements The Berkeley Center for Structural Biology is supported in part by the National Institutes of Health (NIH), National Institute of General Medical Sciences, and the Howard Hughes Medical Institute. The Advanced Light Source (ALS) is supported by the Director, Office of Science, Office of Basic Energy Sciences and US Department of Energy under contract number DE-AC02-05CH11231. We thank R. Vance and C. Kaplan for discussions. We acknowledge the use of electron microscopy facilities at the Biological Science Imaging Resource, which is supported by Florida State University and NIH grants S10 RR025080 and S10 OD018142. We acknowledge TAMU/LBMS for tandem mass spectrometry analyses. This research was supported in part by the Cancer Prevention and Research Institute of Texas (grant RP150454 to P.L.), the Welch Foundation (grant A-1931-20170325 to P.L.) and the NIH (grant R01 AI145287 to P.L. and R.O.W.).

Keywords

  • A3. Molecular beam epitaxy
  • B1. Alloys
  • B2. Magnetic materials

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