Growth rate reduction of GaN due to Ga surface accumulation

D. E. Crawford, R. Held, A. M. Johnston, A. M. Dabiran, Philip I Cohen

Research output: Contribution to journalArticlepeer-review

Abstract

GaN(0001) has been grown on Al2O3 (0001) by molecular beam epitaxy where NH3 was used as the nitrogen precursor. Desorption mass spectroscopy and reflection high energy electron diffraction (RHEED) were used to monitor the relationship between growth rate and the incident fluxes during growth. Excess surface Ga decreases the GaN formation rate when the substrate temperature is too low or the Ga flux is too high. A simple rate equation is used to describe the observed behavior.

Original languageEnglish (US)
Pages (from-to)7d
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume1
DOIs
StatePublished - Jan 1 1996

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