Growth rate reduction of GaN due to Ga surface accumulation

D. E. Crawford; R. Held; A. M. Johnston; A. M. Dabiran; Philip I Cohen

doi:10.1557/s1092578300001848

Growth rate reduction of GaN due to Ga surface accumulation

D. E. Crawford, R. Held, A. M. Johnston, A. M. Dabiran, Philip I Cohen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

GaN(0001) has been grown on Al₂O₃ (0001) by molecular beam epitaxy where NH₃ was used as the nitrogen precursor. Desorption mass spectroscopy and reflection high energy electron diffraction (RHEED) were used to monitor the relationship between growth rate and the incident fluxes during growth. Excess surface Ga decreases the GaN formation rate when the substrate temperature is too low or the Ga flux is too high. A simple rate equation is used to describe the observed behavior.

Original language	English (US)
Pages (from-to)	7d
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	1
DOIs	https://doi.org/10.1557/s1092578300001848
State	Published - 1996

Publisher link

10.1557/s1092578300001848

Find It

Find It at U of M Libraries

Cite this

@article{a7af7c927e5e42509f1cb2ed8eadf025,

title = "Growth rate reduction of GaN due to Ga surface accumulation",

abstract = "GaN(0001) has been grown on Al2O3 (0001) by molecular beam epitaxy where NH3 was used as the nitrogen precursor. Desorption mass spectroscopy and reflection high energy electron diffraction (RHEED) were used to monitor the relationship between growth rate and the incident fluxes during growth. Excess surface Ga decreases the GaN formation rate when the substrate temperature is too low or the Ga flux is too high. A simple rate equation is used to describe the observed behavior.",

author = "Crawford, {D. E.} and R. Held and Johnston, {A. M.} and Dabiran, {A. M.} and Cohen, {Philip I}",

year = "1996",

doi = "10.1557/s1092578300001848",

language = "English (US)",

volume = "1",

pages = "7d",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Growth rate reduction of GaN due to Ga surface accumulation

AU - Crawford, D. E.

AU - Held, R.

AU - Johnston, A. M.

AU - Dabiran, A. M.

AU - Cohen, Philip I

PY - 1996

Y1 - 1996

N2 - GaN(0001) has been grown on Al2O3 (0001) by molecular beam epitaxy where NH3 was used as the nitrogen precursor. Desorption mass spectroscopy and reflection high energy electron diffraction (RHEED) were used to monitor the relationship between growth rate and the incident fluxes during growth. Excess surface Ga decreases the GaN formation rate when the substrate temperature is too low or the Ga flux is too high. A simple rate equation is used to describe the observed behavior.

AB - GaN(0001) has been grown on Al2O3 (0001) by molecular beam epitaxy where NH3 was used as the nitrogen precursor. Desorption mass spectroscopy and reflection high energy electron diffraction (RHEED) were used to monitor the relationship between growth rate and the incident fluxes during growth. Excess surface Ga decreases the GaN formation rate when the substrate temperature is too low or the Ga flux is too high. A simple rate equation is used to describe the observed behavior.

UR - http://www.scopus.com/inward/record.url?scp=4043171261&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4043171261&partnerID=8YFLogxK

U2 - 10.1557/s1092578300001848

DO - 10.1557/s1092578300001848

M3 - Article

AN - SCOPUS:4043171261

SN - 1092-5783

VL - 1

SP - 7d

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

ER -

Growth rate reduction of GaN due to Ga surface accumulation

Abstract

Publisher link

Find It

Other files and links

Fingerprint

Cite this