Growth of void free Cu2ZnSnS4 (CZTS) thin films by sulfurization of stacked metallic precursor films

S. M. Pawar; A. I. Inamdar; K. V. Gurav; S. W. Shin; Yongcheol Jo; Jongmin Kim; Hyunsik Im; Jin Hyeok Kim

doi:10.1016/j.vacuum.2014.01.007

Growth of void free Cu₂ZnSnS₄ (CZTS) thin films by sulfurization of stacked metallic precursor films

S. M. Pawar, A. I. Inamdar, K. V. Gurav, S. W. Shin, Yongcheol Jo, Jongmin Kim, Hyunsik Im, Jin Hyeok Kim

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

A void free Cu₂ZnSnS₄ (CZTS) thin films were grown on Mo-coated glass substrates by using sulfurization of sputtered stack metallic precursor at 580 C in (N₂ + H₂S) atmosphere for different sulfurization times ranging from 60 min to 180 min. The effects of sulfurization time on the structural, morphological, chemical and optical properties of the sulfurized CZTS thin films have been investigated. All the sulfurized CZTS thin films exhibit a polycrystalline kesterite crystal structure with a void free densely packed large grain morphology. Compositional study indicates that the Zn/Sn ratio increases with increasing sulfurization time, and for long sulfurization the sulfur content in the film decreases. The band gap energies of the sulfurized CZTS thin films are found to be in the range between 1.51 and 1.64 eV.

Original language	English (US)
Pages (from-to)	57-60
Number of pages	4
Journal	Vacuum
Volume	104
DOIs	https://doi.org/10.1016/j.vacuum.2014.01.007
State	Published - Jun 2014
Externally published	Yes

Bibliographical note

Funding Information:
This research work was supported by the National Research Foundation (NRF) of Korea (Grant Nos. 2012-008517 and 2013-044975 ).

Keywords

CuZnSnS
RF sputtering method
Stacked metallic precursor films
Sulfurization

Publisher link

10.1016/j.vacuum.2014.01.007

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@article{c6c95274221343eab0826341dd1a487d,

title = "Growth of void free Cu2ZnSnS4 (CZTS) thin films by sulfurization of stacked metallic precursor films",

abstract = "A void free Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated glass substrates by using sulfurization of sputtered stack metallic precursor at 580 C in (N2 + H2S) atmosphere for different sulfurization times ranging from 60 min to 180 min. The effects of sulfurization time on the structural, morphological, chemical and optical properties of the sulfurized CZTS thin films have been investigated. All the sulfurized CZTS thin films exhibit a polycrystalline kesterite crystal structure with a void free densely packed large grain morphology. Compositional study indicates that the Zn/Sn ratio increases with increasing sulfurization time, and for long sulfurization the sulfur content in the film decreases. The band gap energies of the sulfurized CZTS thin films are found to be in the range between 1.51 and 1.64 eV.",

keywords = "CuZnSnS, RF sputtering method, Stacked metallic precursor films, Sulfurization",

author = "Pawar, {S. M.} and Inamdar, {A. I.} and Gurav, {K. V.} and Shin, {S. W.} and Yongcheol Jo and Jongmin Kim and Hyunsik Im and Kim, {Jin Hyeok}",

note = "Funding Information: This research work was supported by the National Research Foundation (NRF) of Korea (Grant Nos. 2012-008517 and 2013-044975 ). ",

year = "2014",

month = jun,

doi = "10.1016/j.vacuum.2014.01.007",

language = "English (US)",

volume = "104",

pages = "57--60",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Growth of void free Cu2ZnSnS4 (CZTS) thin films by sulfurization of stacked metallic precursor films

AU - Pawar, S. M.

AU - Inamdar, A. I.

AU - Gurav, K. V.

AU - Shin, S. W.

AU - Jo, Yongcheol

AU - Kim, Jongmin

AU - Im, Hyunsik

AU - Kim, Jin Hyeok

N1 - Funding Information: This research work was supported by the National Research Foundation (NRF) of Korea (Grant Nos. 2012-008517 and 2013-044975 ).

PY - 2014/6

Y1 - 2014/6

N2 - A void free Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated glass substrates by using sulfurization of sputtered stack metallic precursor at 580 C in (N2 + H2S) atmosphere for different sulfurization times ranging from 60 min to 180 min. The effects of sulfurization time on the structural, morphological, chemical and optical properties of the sulfurized CZTS thin films have been investigated. All the sulfurized CZTS thin films exhibit a polycrystalline kesterite crystal structure with a void free densely packed large grain morphology. Compositional study indicates that the Zn/Sn ratio increases with increasing sulfurization time, and for long sulfurization the sulfur content in the film decreases. The band gap energies of the sulfurized CZTS thin films are found to be in the range between 1.51 and 1.64 eV.

AB - A void free Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated glass substrates by using sulfurization of sputtered stack metallic precursor at 580 C in (N2 + H2S) atmosphere for different sulfurization times ranging from 60 min to 180 min. The effects of sulfurization time on the structural, morphological, chemical and optical properties of the sulfurized CZTS thin films have been investigated. All the sulfurized CZTS thin films exhibit a polycrystalline kesterite crystal structure with a void free densely packed large grain morphology. Compositional study indicates that the Zn/Sn ratio increases with increasing sulfurization time, and for long sulfurization the sulfur content in the film decreases. The band gap energies of the sulfurized CZTS thin films are found to be in the range between 1.51 and 1.64 eV.

KW - CuZnSnS

KW - RF sputtering method

KW - Stacked metallic precursor films

KW - Sulfurization

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U2 - 10.1016/j.vacuum.2014.01.007

DO - 10.1016/j.vacuum.2014.01.007

M3 - Article

AN - SCOPUS:84893211816

SN - 0042-207X

VL - 104

SP - 57

EP - 60

JO - Vacuum

JF - Vacuum

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