Growth of high quality Ge layer on silica nano-spheres integrated Ge/Si template using UHV-CVD

Keun Wook Shin; Sung Hyun Park; Yongjo Park; Euijoon Yoon

doi:10.1149/2.0151503jss

Growth of high quality Ge layer on silica nano-spheres integrated Ge/Si template using UHV-CVD

Keun Wook Shin, Sung Hyun Park, Yongjo Park, Euijoon Yoon

Mechanical Engineering

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Abstract

We have investigated the growth of high quality Ge layer on Si substrate using silica nano-spheres (NSs), which behaved as masks to directly block threading dislocations. Two-step growth after the silica NS incorporation into the surface led to a coalesced Ge layer with low threading dislocation density (TDD). TDD in the resultant Ge layer was reduced from 6.4 × 10⁸ to 6.9 × 10⁷ cm^-2, and decreased further to 1.4 × 10⁷ cm^-2 by post annealing. In addition to the TDD reduction, we speculated that the suppression of {111} facet during the growth restricted significantly the generation of planar defects.

Original language	English (US)
Pages (from-to)	P83-P85
Journal	ECS Journal of Solid State Science and Technology
Volume	4
Issue number	3
DOIs	https://doi.org/10.1149/2.0151503jss
State	Published - Jan 1 2015

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abstract = "We have investigated the growth of high quality Ge layer on Si substrate using silica nano-spheres (NSs), which behaved as masks to directly block threading dislocations. Two-step growth after the silica NS incorporation into the surface led to a coalesced Ge layer with low threading dislocation density (TDD). TDD in the resultant Ge layer was reduced from 6.4 × 108 to 6.9 × 107 cm-2, and decreased further to 1.4 × 107 cm-2 by post annealing. In addition to the TDD reduction, we speculated that the suppression of {111} facet during the growth restricted significantly the generation of planar defects.",

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N2 - We have investigated the growth of high quality Ge layer on Si substrate using silica nano-spheres (NSs), which behaved as masks to directly block threading dislocations. Two-step growth after the silica NS incorporation into the surface led to a coalesced Ge layer with low threading dislocation density (TDD). TDD in the resultant Ge layer was reduced from 6.4 × 108 to 6.9 × 107 cm-2, and decreased further to 1.4 × 107 cm-2 by post annealing. In addition to the TDD reduction, we speculated that the suppression of {111} facet during the growth restricted significantly the generation of planar defects.

AB - We have investigated the growth of high quality Ge layer on Si substrate using silica nano-spheres (NSs), which behaved as masks to directly block threading dislocations. Two-step growth after the silica NS incorporation into the surface led to a coalesced Ge layer with low threading dislocation density (TDD). TDD in the resultant Ge layer was reduced from 6.4 × 108 to 6.9 × 107 cm-2, and decreased further to 1.4 × 107 cm-2 by post annealing. In addition to the TDD reduction, we speculated that the suppression of {111} facet during the growth restricted significantly the generation of planar defects.

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Growth of high quality Ge layer on silica nano-spheres integrated Ge/Si template using UHV-CVD

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