Growth of high quality Ge layer on silica nano-spheres integrated Ge/Si template using UHV-CVD

Keun Wook Shin, Sung Hyun Park, Yongjo Park, Euijoon Yoon

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We have investigated the growth of high quality Ge layer on Si substrate using silica nano-spheres (NSs), which behaved as masks to directly block threading dislocations. Two-step growth after the silica NS incorporation into the surface led to a coalesced Ge layer with low threading dislocation density (TDD). TDD in the resultant Ge layer was reduced from 6.4 × 108 to 6.9 × 107 cm-2, and decreased further to 1.4 × 107 cm-2 by post annealing. In addition to the TDD reduction, we speculated that the suppression of {111} facet during the growth restricted significantly the generation of planar defects.

Original languageEnglish (US)
Pages (from-to)P83-P85
JournalECS Journal of Solid State Science and Technology
Volume4
Issue number3
DOIs
StatePublished - Jan 1 2015

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