Abstract
We have investigated the growth of high quality Ge layer on Si substrate using silica nano-spheres (NSs), which behaved as masks to directly block threading dislocations. Two-step growth after the silica NS incorporation into the surface led to a coalesced Ge layer with low threading dislocation density (TDD). TDD in the resultant Ge layer was reduced from 6.4 × 108 to 6.9 × 107 cm-2, and decreased further to 1.4 × 107 cm-2 by post annealing. In addition to the TDD reduction, we speculated that the suppression of {111} facet during the growth restricted significantly the generation of planar defects.
Original language | English (US) |
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Pages (from-to) | P83-P85 |
Journal | ECS Journal of Solid State Science and Technology |
Volume | 4 |
Issue number | 3 |
DOIs | |
State | Published - Jan 1 2015 |