We demonstrate the growth of α-Si 3N 4 nanowires with GaN branching on a (100) Si substrate via metal-organic chemical vapor deposition. Transmission electron microscopy and energy disperse spectroscopy results reveal that the well-aligned Si 3N 4 nanowires are grown on a (100) Si substrate, and GaN branches are epitaxially formed on the side walls of Si 3N 4 nanowires. The possible growth mechanism of Si 3N 4 nanowires was attributed to the melt-back phenomenon originating from the reaction of Ga-metal and Si substrates.
Bibliographical noteFunding Information:
This research was supported by a research fund of Hanyang University (No. 2011-00000000229 ).
- Branched nanowire
- Si N
- Synthesis methods