Keyphrases
Field-effect Transistors
100%
Reaction Conditions
100%
Black Arsenic
100%
Silica
50%
Elemental Composition
50%
Single Crystal
50%
Growth Mechanism
50%
Maximum Temperature
50%
Diffraction
50%
Raman Spectroscopy
50%
Iodide
50%
Threshold Voltage
50%
Electron Backscatter Diffraction
50%
X-ray Photoelectron Spectroscopy
50%
Film Growth
50%
Ampule
50%
Mass Ratio
50%
Tin(IV)
50%
Exfoliating
50%
Thin Film Growth
50%
Structure Composition
50%
On-off Ratio
50%
Transmission Microscopy
50%
Transport Method
50%
Field-effect Hole Mobility
50%
Growth Techniques
50%
Reaction Duration
50%
Arsenic Phosphorus
50%
Thin Film Growth Process
50%
Red Phosphorus
50%
Valuable Insight
50%
Engineering
Arsenic
100%
Field-Effect Transistor
100%
Thin Films
100%
Thin Film Growth
66%
Maximum Temperature
33%
Ray Diffraction
33%
Growth Mechanism
33%
Reactant
33%
Ray Photoelectron Spectroscopy
33%
Elemental Composition
33%
Current Ratio
33%
Film Growth Process
33%
Red Phosphor
33%
Silicon Dioxide
33%
Crystal Structure
33%
Mass Ratio
33%
Physics
Field Effect Transistor
100%
Thin Film Growth
100%
Thin Films
100%
Mass Ratio
50%
Field Effect
50%
Single Crystal
50%
Raman Spectroscopy
50%
Threshold Voltage
50%
Photoelectron Spectroscopy
50%
Crystal Structure
50%
Chemical Element
50%
Material Science
Field Effect Transistors
100%
Arsenic
100%
Thin Films
100%
Tin
66%
Thin Film Growth
66%
Raman Spectroscopy
33%
Film Growth
33%
Photoemission Spectroscopy
33%
Electron Backscatter Diffraction
33%
Hole Mobility
33%
Single Crystal
33%
Crystal Structure
33%