Projects per year
Abstract
Black arsenic phosphorus single crystals were grown using a short-way transport technique resulting in crystals up to 12 x 110 μm and ranging from 200 nm to 2 μm thick. The reaction conditions require tin, tin(IV) iodide, grey arsenic, and red phosphorus placed in an evacuated quartz ampule and ramped up to a maximum temperature of 630 °C. The crystal structure and elemental composition were characterized using Raman spectroscopy, x-ray diffraction, and x-ray photoelectron spectroscopy, cross-sectional transmission microscopy and electron backscatter diffraction. The data provides valuable insight into the growth mechanism. A previously developed b-P thin film growth technique can be adapted to b-AsP film growth with slight modifications to the reaction duration and reactant mass ratios. Devices fabricated from exfoliated bulk-b-AsP grown in the same reaction condition as the thin film growth process are characterized, showing an on-off current ratio of 102, a threshold voltage of -60 V, and a peak field-effect hole mobility of 23 cm2/V·s at Vd=-0.9 V and Vg=-60 V.
Original language | English (US) |
---|---|
Article number | 325601 |
Journal | Nanotechnology |
Volume | 32 |
Issue number | 32 |
Early online date | Apr 27 2021 |
DOIs | |
State | Published - Aug 6 2021 |
Bibliographical note
Funding Information:Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation (NSF) through the National Nano Coordinated Infrastructure Network, under Award ECCS-2025124. N.I. also received support from this award. P.G. and S.J.K. acknowledge support by the NSF under Award ECCS-1708769. Parts of this work were supported by the Partnership for Research and Education in Materials (PREM) Program of the National Science Foundation under Award Number DMR-1523577. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program, under Award DMR-1420013.
Publisher Copyright:
© 2021 IOP Publishing Ltd.
Keywords
- black arsenic phosphorus
- crystal growth
- thin film
MRSEC Support
- Partial
- Shared
PubMed: MeSH publication types
- Journal Article
Fingerprint
Dive into the research topics of 'Growth of black arsenic phosphorus thin films and its application for field-effect transistors'. Together they form a unique fingerprint.Projects
- 4 Finished
-
REU Site: Science and Engineering in Nanomaterials
Blank, D. A. (PI)
THE NATIONAL SCIENCE FOUNDATION
4/1/19 → 3/31/23
Project: Research project
-
Partnership for Research and Education in Materials
Lodge, T. (PI)
UNIVERSITY OF TEXAS RIO GRANDE VALLEY, THE NATIONAL SCIENCE FOUNDATION
9/1/15 → 8/31/23
Project: Research project
-
University of Minnesota MRSEC (DMR-1420013)
Lodge, T. P. (PI)
11/1/14 → 10/31/20
Project: Research project