Growth of (111)B-oriented resonant tunneling devices in a gas source molecular beam epitaxy system

Keyphrases

• Gas Source Molecular Beam Epitaxy 100%
• Resonant Tunneling Devices 100%
• B-Oriented 100%
• Axial Stress 66%
• Peak Voltage 66%
• Voltage Shift 66%
• Crystal Direction 66%
• III-V 33%
• Heterostructure 33%
• Current-voltage Characteristics 33%
• Substrate Temperature 33%
• Piezoelectric Effect 33%
• Compressive Stress 33%
• Flux Ratio 33%
• Uniaxial Compressive 33%
• Double Barrier 33%
• Peak Shift 33%
• Resonant Current 33%
• Misoriented Substrate 33%
• Asymmetric Peak 33%
• Current Peak 33%

Physics

• Resonant Tunneling 100%
• Molecular Beam Epitaxy 100%
• Piezoelectricity 50%
• Piezoelectricity 50%

Material Science

• Piezoelectricity 100%
• Molecular Beam Epitaxy 100%
• Heterojunction 50%
• Current Voltage Characteristics 50%