β-Ga2O3 nanowires were successfully grown by simple evaporation without catalyst. In this experiment, only 4N (99.99 %) grade gallium and oxygen gas were used for the growth of β-Ga2O3 nanowires. Nanometer-sized β-Ga2O3 crystals were analyzed by field emission scanning electron microscopy (FE-SEM) equipped with energy dispersive X-ray spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), and selected-area electron diffraction. FE-SEM images showed straight and bent shaped β-Ga2O3 nanowires. It was identified from XRD data that the crystals were β-Ga2O3 whose structure is monoclinic with space group of C2/m. TEM images indicated that the β-Ga2O3 nanowires were crystallized during the growth process. Unlikely the nanometer-sized materials synthesized with catalyst, β-Ga2O3 nanowires were grown in the VS (Vapor-Solid) process.
|Original language||English (US)|
|Journal||Journal of the Korean Physical Society|
|State||Published - Feb 1 2003|
|Event||Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of|
Duration: Aug 20 2002 → Aug 23 2002
- VS process