Growth of β-Ga₂O₃ nanowires with straight and bent shapes by simple evaporation without catalyst

β-Ga₂O₃ nanowires were successfully grown by simple evaporation without catalyst. In this experiment, only 4N (99.99 %) grade gallium and oxygen gas were used for the growth of β-Ga₂O₃ nanowires. Nanometer-sized β-Ga₂O₃ crystals were analyzed by field emission scanning electron microscopy (FE-SEM) equipped with energy dispersive X-ray spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), and selected-area electron diffraction. FE-SEM images showed straight and bent shaped β-Ga₂O₃ nanowires. It was identified from XRD data that the crystals were β-Ga₂O₃ whose structure is monoclinic with space group of C2/m. TEM images indicated that the β-Ga₂O₃ nanowires were crystallized during the growth process. Unlikely the nanometer-sized materials synthesized with catalyst, β-Ga₂O₃ nanowires were grown in the VS (Vapor-Solid) process.