Growth of β-Ga2O3 nanowires with straight and bent shapes by simple evaporation without catalyst

Young Heon Kim, Jong Seok Jeong, Jeong Yong Lee

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

β-Ga2O3 nanowires were successfully grown by simple evaporation without catalyst. In this experiment, only 4N (99.99 %) grade gallium and oxygen gas were used for the growth of β-Ga2O3 nanowires. Nanometer-sized β-Ga2O3 crystals were analyzed by field emission scanning electron microscopy (FE-SEM) equipped with energy dispersive X-ray spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), and selected-area electron diffraction. FE-SEM images showed straight and bent shaped β-Ga2O3 nanowires. It was identified from XRD data that the crystals were β-Ga2O3 whose structure is monoclinic with space group of C2/m. TEM images indicated that the β-Ga2O3 nanowires were crystallized during the growth process. Unlikely the nanometer-sized materials synthesized with catalyst, β-Ga2O3 nanowires were grown in the VS (Vapor-Solid) process.

Original languageEnglish (US)
Pages (from-to)S250-S253
JournalJournal of the Korean Physical Society
Volume42
Issue numberSPEC.
StatePublished - Feb 1 2003
EventProceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of
Duration: Aug 20 2002Aug 23 2002

Keywords

  • Nanowire
  • VS process
  • β-GaO

Fingerprint Dive into the research topics of 'Growth of β-Ga<sub>2</sub>O<sub>3</sub> nanowires with straight and bent shapes by simple evaporation without catalyst'. Together they form a unique fingerprint.

Cite this