Group IVB oxides as high permittivity gate insulators

S. A. Campbell, B. He, R. Smith, T. Ma, N. Hoilien, C. Taylor, W. L. Gladfelter

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Scopus citations


Increasing MOSFET performance requires scaling, the systematic reduction in device dimensions. Tunneling leakage, however, provides an absolute scaling limit for SiO2 of about 1.5 nm. Power limitations and device reliability are likely to pose softer limits slightly above 2 nm. We have investigated the use of high permittivity materials such as TiO2, ZrO2, and their silicates as potential replacements for SiO2. We have synthesized titanium nitrate (Ti(NO3)4 or TN), zirconium nitrate (Zr(NO3)4 or ZrN), and hafnium nitrate (Hf(NO3)4 or HfN) as hydrogen and carbon free deposition precursors. Several problems arise in the use of these films including the formation of an amorphous low permittivity interfacial layer. For TiO2 this layer is formed by silicon up diffusion. Surface nitridation retards the formation of the interfacial layer. We discuss the effects of both thermal and remote plasma surface nitridation treatments on the properties of the film stack. ZrO2 and HfO2 appear to form a thermal layer of silicon oxide between the high permittivity film and the silicon and have excess oxygen in the bulk of the film.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages10
StatePublished - 2000
EventChemical Processing of Dielectrics, Insulators and Electronic Ceramics - Boston, MA, USA
Duration: Nov 29 1999Dec 1 1999


OtherChemical Processing of Dielectrics, Insulators and Electronic Ceramics
CityBoston, MA, USA


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