Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

Tiezhong Ma, Stephen A. Campbell, Ryan Smith, Noel Hoilien, Boyong He, Wayne L. Gladfelter, Christopher Hobbs, Doug Buchanan, Charles Taylor, Michael Gribelyuk, Mike Tiner, Matthew Coppel, Jang Jung Lee

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

The electrical performance of column IVB metal oxide thin films deposited from their respective anhydrous metal nitrate-precursors show significant differences. Titanium dioxide has a high permittivity, but shows a large positive fixed charge and low inversion layer mobility. The amorphous interfacial layer is compositionally graded and contains a high concentration of Si-Ti bonds. In contrast, ZrO2 and HfO2 form well defined oxynitride interfacial layers and a good interface with silicon with much less fixed charge. The electron inversion layer mobility for an HfO2/SiOxNy/Si stack appears comparable to that of a conventional SiO2/Si interface.

Original languageEnglish (US)
Pages (from-to)2348-2356
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume48
Issue number10
DOIs
StatePublished - Oct 1 2001

Keywords

  • CVD
  • Ceramics
  • Dielectric films
  • Hafnium compounds
  • Insulated gate FETs
  • MIS devices
  • Titanium compounds
  • Zirconium compounds

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