Graphene-side-gate engineering

Ching Tzu Chen, Tony Low, Hsin Ying Chiu, Wenjuan Zhu

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


Various mesoscopic devices exploit electrostatic side gates for their operation. In this letter, we investigate how voltage biasing of graphene side gates modulates the electrical transport characteristics of a graphene channel. We explore myriads of typical side-gated devices such as symmetric dual-side gates and asymmetric single-side gates, in monolayer and bilayer graphene. The side gates modulate the electrostatic doping in the graphene channel whose effect is reflected in transport measurement. This modulation efficiency is systematically characterized for all our devices and agrees well with the modeling presented.

Original languageEnglish (US)
Article number6144689
Pages (from-to)330-332
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
StatePublished - Mar 2012


  • Electrostatics
  • graphene field-effect transistor (FET)
  • side gate


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