Graphene pn junction: Electronic transport and devices

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Scopus citations


This chapter provides a tutorial style review on the physics of electronic transport through a graphene pn junction in the absence and presence of a magnetic field, including the case of a strain-induced pseudo-magnetic field. We review the basic transport theories for the graphene pn junction and complement this understandingwith numerical studies and key experimental findings. Novel devices, such as electron optics and strain-induced pseudo-magnetic devices, that exploit the physics of the graphene pn junction discussed in here, will be presented.

Original languageEnglish (US)
Title of host publicationGraphene Nanoelectronics
Subtitle of host publicationMetrology, Synthesis,Properties and Applications
EditorsHassan Raza
Number of pages42
StatePublished - 2012

Publication series

NameNanoScience and Technology
ISSN (Print)1434-4904

Bibliographical note

Funding Information:
This work is supported by the Institute of Nanoelectronics EXploration (INDEX), a National Science Foundation (NSF) research center focusing on new computing devices beyond Moore’s law, which forms the motivation for this review. This work had benefitted from useful collaborations/discussions with J. R. Williams, C. M. Marcus, J. U. Lee, P. Kim, C. Y. Sung, W. Wang, M. Lundstrom, J. Appenzeller, S. Datta, P. D. Ye, A. Neal, Y. Sui, D. Nikonov, M. Katsnelson, F. Guinea, K. Novoselov, A. Geim, D. Berdebes, R. Grassi. Generous computing resources from Network for Computational Nanoelectronics are gratefully acknowledge.


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