While graphite oxide was first identified in 1855 [1, 2], the recent discovery of stable graphene sheets has led to renewed interest in the chemical structure and potential applications of graphene oxide sheets. These structures have several physical properties that could aid in the large scale development of a graphene electronics industry. Depending on the degree of oxidization, grapheme oxide layers can be either semiconducting or insulating and provide an important complement to metallic graphene layers. In addition, the electronic and optical properties of these films can be controlled by the selective removal or addition of oxygen. For example, selective oxidation of graphene sheets could lead to electronic circuit fabrication on the scale of a single atomic layer. Graphene oxide is also dispersible in water and other solvents and this provides a facile route for graphene deposition on a wide range of substrates formacroelectronics applications. Although graphite oxide has been known for roughly 150 years, key questions remain in regards to its chemical structure, electronic properties, and fabrication. Answering these issues has taken on special urgency with the development of graphene electronics. In this chapter, we will provide an overview of the field with special focus on synthesis, characterization, and first principles analysis of bonding and electronic structures. Finally, we will also address some of the most promising applications for graphene oxide in electronics and other industries.
|Original language||English (US)|
|Title of host publication||Graphene Nanoelectronics|
|Subtitle of host publication||Metrology, Synthesis,Properties and Applications|
|Number of pages||30|
|State||Published - 2012|
|Name||NanoScience and Technology|
Bibliographical noteFunding Information:
D.A.S. gratefully acknowledges support through the National Science Foundation for the National Nanostructure Infrastructure Network (NNIN) and the Cornell Nanoscale Science and Technology Facility. A portion of the density functional calculations discussed in this chapter were calculated using the Intel Cluster at the Cornell Nanoscale Facility. K. A. M. acknowledges partial financial support from the Abu Dhabi-Minnesota Institute for Research Excellence (AD-MIRE); a partnership between the Petroleum Institute of Abu Dhabi and the Department of Chemical Engineering and Materials Science of the University of Minnesota. The authors also thank collaborators Prof. M. Chhowalla, Dr. C. Mattevi at Rutgers University and Prof. J. Silcox, Prof. S. Tiwari at Cornell University for many fruitful discussions.