TY - GEN
T1 - Graphene and black phosphorus for infrared optoelectronics
AU - Low, Tony
PY - 2017/8/1
Y1 - 2017/8/1
N2 - In this talk, I will review the recent developments in the understanding of the infrared optoelectronics processes in graphene and black phosphorus, and their possible application space. The infrared spectrum (-1mm-1 um) presents many opportunities for photonics applications. For example, silicon photonics has been a very vibrant field of research the past decade due to its potential for telecom and datacom applications, and operates at the 1.55 mm wavelength. There are also many applications for mid-infrared (25-2.5 mm) integrated nanophotonics. Most prominent example is for chemical and biosensing, in which such technology could enable lab-on-a-chip integrated sensors (1,2). In addition, mid-infrared integrated nanophotonics also offers the tantalizing prospect of exploiting an inherent mid-infrared transparency window in the atmosphere for high speed data communications (3). New materials continue to play a critical role in advancing these developments (4,5).
AB - In this talk, I will review the recent developments in the understanding of the infrared optoelectronics processes in graphene and black phosphorus, and their possible application space. The infrared spectrum (-1mm-1 um) presents many opportunities for photonics applications. For example, silicon photonics has been a very vibrant field of research the past decade due to its potential for telecom and datacom applications, and operates at the 1.55 mm wavelength. There are also many applications for mid-infrared (25-2.5 mm) integrated nanophotonics. Most prominent example is for chemical and biosensing, in which such technology could enable lab-on-a-chip integrated sensors (1,2). In addition, mid-infrared integrated nanophotonics also offers the tantalizing prospect of exploiting an inherent mid-infrared transparency window in the atmosphere for high speed data communications (3). New materials continue to play a critical role in advancing these developments (4,5).
UR - http://www.scopus.com/inward/record.url?scp=85028050256&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85028050256&partnerID=8YFLogxK
U2 - 10.1109/DRC.2017.7999504
DO - 10.1109/DRC.2017.7999504
M3 - Conference contribution
AN - SCOPUS:85028050256
T3 - Device Research Conference - Conference Digest, DRC
BT - 75th Annual Device Research Conference, DRC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 75th Annual Device Research Conference, DRC 2017
Y2 - 25 June 2017 through 28 June 2017
ER -