Gigahertz photothermal effect in silicon waveguides

W. H P Pernice; Mo Li; H. X. Tang

doi:10.1063/1.3036957

Gigahertz photothermal effect in silicon waveguides

W. H P Pernice
, Mo Li
, H. X. Tang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We present a theoretical and experimental study of the frequency response of the photothermal effect in silicon waveguides. The effect is studied for modulation frequencies up to 3 GHz using integrated photonic circuits in Mach-Zehnder and ring oscillator configurations. The thermal behavior of silicon waveguides is described by a diffusive substrate heating model. In the low-frequency regime, the frequency response follows a -log (f) dependence, while a f-^1/2 dependence is found in the high-frequency regime. Close agreement between theory and experiment allows for the accurate extraction of the photothermal absorption coefficient.

Original language	English (US)
Article number	213106
Journal	Applied Physics Letters
Volume	93
Issue number	21
DOIs	https://doi.org/10.1063/1.3036957
State	Published - 2008

Bibliographical note

Funding Information:
W.H.P.P. acknowledges support from the Alexander-von-Humboldt foundation through a postdoctoral fellowship. H.X.T. acknowledges a young faculty startup grant from Yale University.

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title = "Gigahertz photothermal effect in silicon waveguides",

abstract = "We present a theoretical and experimental study of the frequency response of the photothermal effect in silicon waveguides. The effect is studied for modulation frequencies up to 3 GHz using integrated photonic circuits in Mach-Zehnder and ring oscillator configurations. The thermal behavior of silicon waveguides is described by a diffusive substrate heating model. In the low-frequency regime, the frequency response follows a -log (f) dependence, while a f-1/2 dependence is found in the high-frequency regime. Close agreement between theory and experiment allows for the accurate extraction of the photothermal absorption coefficient.",

author = "Pernice, \{W. H P\} and Mo Li and Tang, \{H. X.\}",

note = "Funding Information: W.H.P.P. acknowledges support from the Alexander-von-Humboldt foundation through a postdoctoral fellowship. H.X.T. acknowledges a young faculty startup grant from Yale University.",

year = "2008",

doi = "10.1063/1.3036957",

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journal = "Applied Physics Letters",

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T1 - Gigahertz photothermal effect in silicon waveguides

AU - Pernice, W. H P

AU - Li, Mo

AU - Tang, H. X.

N1 - Funding Information: W.H.P.P. acknowledges support from the Alexander-von-Humboldt foundation through a postdoctoral fellowship. H.X.T. acknowledges a young faculty startup grant from Yale University.

PY - 2008

Y1 - 2008

N2 - We present a theoretical and experimental study of the frequency response of the photothermal effect in silicon waveguides. The effect is studied for modulation frequencies up to 3 GHz using integrated photonic circuits in Mach-Zehnder and ring oscillator configurations. The thermal behavior of silicon waveguides is described by a diffusive substrate heating model. In the low-frequency regime, the frequency response follows a -log (f) dependence, while a f-1/2 dependence is found in the high-frequency regime. Close agreement between theory and experiment allows for the accurate extraction of the photothermal absorption coefficient.

AB - We present a theoretical and experimental study of the frequency response of the photothermal effect in silicon waveguides. The effect is studied for modulation frequencies up to 3 GHz using integrated photonic circuits in Mach-Zehnder and ring oscillator configurations. The thermal behavior of silicon waveguides is described by a diffusive substrate heating model. In the low-frequency regime, the frequency response follows a -log (f) dependence, while a f-1/2 dependence is found in the high-frequency regime. Close agreement between theory and experiment allows for the accurate extraction of the photothermal absorption coefficient.

UR - https://www.scopus.com/pages/publications/57049117357

UR - https://www.scopus.com/pages/publications/57049117357#tab=citedBy

U2 - 10.1063/1.3036957

DO - 10.1063/1.3036957

M3 - Article

AN - SCOPUS:57049117357

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 213106

ER -

Gigahertz photothermal effect in silicon waveguides

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