Germanium and silicon nanocrystal thin-film field-effect transistors from solution

Zachary C. Holman, Chin Yi Liu, Uwe R. Kortshagen

Research output: Contribution to journalArticlepeer-review

109 Scopus citations


Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging field of semiconductor nanocrystal thin film devices. We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films. Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0.02 and 0.006 cm2 V-1 s-1, respectively. Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology.

Original languageEnglish (US)
Pages (from-to)2661-2666
Number of pages6
JournalNano letters
Issue number7
StatePublished - Jul 14 2010


  • FET
  • Germanium
  • Nanocrystal
  • Silicon
  • Thin film
  • Transistor


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