Generation-recombination noise in GaAs p+-i-n+ diodes

Halbert S. Lin, Paul A. Colestock, P. Fang, T. M. Chen

Research output: Contribution to journalConference article

Abstract

Low frequency noise measurements were made on GaAs p-i-n diodes in the temperature and frequency range of 220 to 300 K and 1 kHz to 1 MHz. Comparison of experimental data with generation-recombination-noise theory revealed the presence of a major trapping state within the I-region of these diodes. The activation energy of this trapping state is evaluated. It is concluded that the technique of trapping state identification from low-frequency noise measurements applies to GaAs p-i-n diodes.

Original languageEnglish (US)
Pages (from-to)1295-1297
Number of pages3
JournalConference Proceedings - IEEE SOUTHEASTCON
Volume3
StatePublished - Dec 1 1989
EventProceedings - Energy and Information Technologies in the Southeast - Columbia, SC, USA
Duration: Apr 9 1989Apr 12 1989

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Diodes
Activation energy
Temperature

Cite this

Lin, H. S., Colestock, P. A., Fang, P., & Chen, T. M. (1989). Generation-recombination noise in GaAs p+-i-n+ diodes. Conference Proceedings - IEEE SOUTHEASTCON, 3, 1295-1297.

Generation-recombination noise in GaAs p+-i-n+ diodes. / Lin, Halbert S.; Colestock, Paul A.; Fang, P.; Chen, T. M.

In: Conference Proceedings - IEEE SOUTHEASTCON, Vol. 3, 01.12.1989, p. 1295-1297.

Research output: Contribution to journalConference article

Lin, Halbert S. ; Colestock, Paul A. ; Fang, P. ; Chen, T. M. / Generation-recombination noise in GaAs p+-i-n+ diodes. In: Conference Proceedings - IEEE SOUTHEASTCON. 1989 ; Vol. 3. pp. 1295-1297.
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