Generation of nano-sized free standing single crystal silicon particles

Y. Dong; A. Bapat; S. Hilchie; U. Kortshagen; S. A. Campbell

doi:10.1116/1.1771667

Generation of nano-sized free standing single crystal silicon particles

Y. Dong, A. Bapat, S. Hilchie, U. Kortshagen, S. A. Campbell

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Abstract

The generation of nano-sized monodispersed single crystal silicon particles was examined by designing a system. It was found that the silicon particles were generated using a SiH ₄/H ₂ mixture in a high density plasma. The charged particles were injected into a high temperature annealing tube to be heated. It was concluded that single crystal particles were observed at low temperature anneals (300 °C).

Original language	English (US)
Pages (from-to)	1923-1930
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1771667
State	Published - Jul 2004

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abstract = "The generation of nano-sized monodispersed single crystal silicon particles was examined by designing a system. It was found that the silicon particles were generated using a SiH 4/H 2 mixture in a high density plasma. The charged particles were injected into a high temperature annealing tube to be heated. It was concluded that single crystal particles were observed at low temperature anneals (300 °C).",

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AU - Bapat, A.

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AU - Kortshagen, U.

AU - Campbell, S. A.

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AB - The generation of nano-sized monodispersed single crystal silicon particles was examined by designing a system. It was found that the silicon particles were generated using a SiH 4/H 2 mixture in a high density plasma. The charged particles were injected into a high temperature annealing tube to be heated. It was concluded that single crystal particles were observed at low temperature anneals (300 °C).

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Generation of nano-sized free standing single crystal silicon particles

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