The generation of nano-sized monodispersed single crystal silicon particles was examined by designing a system. It was found that the silicon particles were generated using a SiH 4/H 2 mixture in a high density plasma. The charged particles were injected into a high temperature annealing tube to be heated. It was concluded that single crystal particles were observed at low temperature anneals (300 °C).
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jul 1 2004|