Generation of hot carrier population in colloidal silicon quantum dots for high-efficiency photovoltaics

Pengfei Zhang; Yu Feng; Xiaoming Wen; Wenkai Cao; Rebecca Anthony; Uwe Kortshagen; Gavin Conibeer; Shujuan Huang

doi:10.1016/j.solmat.2015.11.002

Generation of hot carrier population in colloidal silicon quantum dots for high-efficiency photovoltaics

Pengfei Zhang, Yu Feng, Xiaoming Wen, Wenkai Cao, Rebecca Anthony, Uwe Kortshagen, Gavin Conibeer, Shujuan Huang

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Hot carrier generation in silicon (Si) quantum dots (QDs) is studied with power dependent continuous wave photoluminescence (CWPL) spectroscopy. By taking sub-band gap absorption into account, a modified Maxwell-Boltzmann-form equation was employed to achieve accurate theoretical fitting to the CWPL spectra of the Si QDs. As a fitting parameter, the excited carrier temperature was calculated. A steady-state carrier population was revealed with a temperature 500 K above room temperature under illumination equivalent to one standard sun (100 mW/cm²). In addition, sice the carrier temperature increased with the power of illumination, a state filling effect is proposed as a reasonable cause for the elevated carrier temperature by comparative study of the CWPL spectra of Si QDs with three different sizes. These Si QDs show great potential for one of the steps towards a practical hot carrier solar cell (HCSC) device as high carrier temperatures can be achieved by state filling under mild illumination.

Original language	English (US)
Pages (from-to)	391-396
Number of pages	6
Journal	Solar Energy Materials and Solar Cells
Volume	145
DOIs	https://doi.org/10.1016/j.solmat.2015.11.002
State	Published - Feb 1 2016

Bibliographical note

Funding Information:
This Program has been supported by the Australian Government through the Australian Renewable Energy Agency (ARENA) . Responsibility for the views, information or advice expressed herein is not accepted by the Australian Government. Thanks are also given to the Electron Microscope Unit of UNSW for TEM imaging support. In addition, U.K. and R.J.A. were supported by the UMN MRSEC Program of the National Science Foundation under Award Numbers DMR-0819885 and DMR-1420013 .

Publisher Copyright:
© 2015 Elsevier B.V. All right sreserved.

Keywords

Hot carrier solar cell
Photoluminescence
Silicon quantum dots
State filling

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Reporting period for MRSEC

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UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2015.11.002

Cite this

Generation of hot carrier population in colloidal silicon quantum dots for high-efficiency photovoltaics. / Zhang, Pengfei; Feng, Yu; Wen, Xiaoming; Cao, Wenkai; Anthony, Rebecca; Kortshagen, Uwe; Conibeer, Gavin; Huang, Shujuan.

In: Solar Energy Materials and Solar Cells, Vol. 145, 01.02.2016, p. 391-396.

Research output: Contribution to journal › Article › peer-review

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title = "Generation of hot carrier population in colloidal silicon quantum dots for high-efficiency photovoltaics",

abstract = "Hot carrier generation in silicon (Si) quantum dots (QDs) is studied with power dependent continuous wave photoluminescence (CWPL) spectroscopy. By taking sub-band gap absorption into account, a modified Maxwell-Boltzmann-form equation was employed to achieve accurate theoretical fitting to the CWPL spectra of the Si QDs. As a fitting parameter, the excited carrier temperature was calculated. A steady-state carrier population was revealed with a temperature 500 K above room temperature under illumination equivalent to one standard sun (100 mW/cm2). In addition, sice the carrier temperature increased with the power of illumination, a state filling effect is proposed as a reasonable cause for the elevated carrier temperature by comparative study of the CWPL spectra of Si QDs with three different sizes. These Si QDs show great potential for one of the steps towards a practical hot carrier solar cell (HCSC) device as high carrier temperatures can be achieved by state filling under mild illumination.",

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note = "Funding Information: This Program has been supported by the Australian Government through the Australian Renewable Energy Agency (ARENA) . Responsibility for the views, information or advice expressed herein is not accepted by the Australian Government. Thanks are also given to the Electron Microscope Unit of UNSW for TEM imaging support. In addition, U.K. and R.J.A. were supported by the UMN MRSEC Program of the National Science Foundation under Award Numbers DMR-0819885 and DMR-1420013 . Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All right sreserved.",

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N2 - Hot carrier generation in silicon (Si) quantum dots (QDs) is studied with power dependent continuous wave photoluminescence (CWPL) spectroscopy. By taking sub-band gap absorption into account, a modified Maxwell-Boltzmann-form equation was employed to achieve accurate theoretical fitting to the CWPL spectra of the Si QDs. As a fitting parameter, the excited carrier temperature was calculated. A steady-state carrier population was revealed with a temperature 500 K above room temperature under illumination equivalent to one standard sun (100 mW/cm2). In addition, sice the carrier temperature increased with the power of illumination, a state filling effect is proposed as a reasonable cause for the elevated carrier temperature by comparative study of the CWPL spectra of Si QDs with three different sizes. These Si QDs show great potential for one of the steps towards a practical hot carrier solar cell (HCSC) device as high carrier temperatures can be achieved by state filling under mild illumination.

AB - Hot carrier generation in silicon (Si) quantum dots (QDs) is studied with power dependent continuous wave photoluminescence (CWPL) spectroscopy. By taking sub-band gap absorption into account, a modified Maxwell-Boltzmann-form equation was employed to achieve accurate theoretical fitting to the CWPL spectra of the Si QDs. As a fitting parameter, the excited carrier temperature was calculated. A steady-state carrier population was revealed with a temperature 500 K above room temperature under illumination equivalent to one standard sun (100 mW/cm2). In addition, sice the carrier temperature increased with the power of illumination, a state filling effect is proposed as a reasonable cause for the elevated carrier temperature by comparative study of the CWPL spectra of Si QDs with three different sizes. These Si QDs show great potential for one of the steps towards a practical hot carrier solar cell (HCSC) device as high carrier temperatures can be achieved by state filling under mild illumination.

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Generation of hot carrier population in colloidal silicon quantum dots for high-efficiency photovoltaics

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

UN SDGs

Access

Other files and links

Fingerprint

MRSEC IRG-2: Sustainable Nanocrystal Materials

University of Minnesota MRSEC (DMR-1420013)

University of Minnesota MRSEC (DMR-0819885)

Cite this

Generation of hot carrier population in colloidal silicon quantum dots for high-efficiency photovoltaics

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

UN SDGs

Access

Other files and links

Fingerprint

Projects

MRSEC IRG-2: Sustainable Nanocrystal Materials

University of Minnesota MRSEC (DMR-1420013)

University of Minnesota MRSEC (DMR-0819885)

Cite this