Generation of hot carrier population in colloidal silicon quantum dots for high-efficiency photovoltaics

Pengfei Zhang; Yu Feng; Xiaoming Wen; Wenkai Cao; Rebecca Anthony; Uwe Kortshagen; Gavin Conibeer; Shujuan Huang

doi:10.1016/j.solmat.2015.11.002

Generation of hot carrier population in colloidal silicon quantum dots for high-efficiency photovoltaics

Pengfei Zhang, Yu Feng, Xiaoming Wen, Wenkai Cao, Rebecca Anthony, Uwe Kortshagen, Gavin Conibeer, Shujuan Huang

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Hot carrier generation in silicon (Si) quantum dots (QDs) is studied with power dependent continuous wave photoluminescence (CWPL) spectroscopy. By taking sub-band gap absorption into account, a modified Maxwell-Boltzmann-form equation was employed to achieve accurate theoretical fitting to the CWPL spectra of the Si QDs. As a fitting parameter, the excited carrier temperature was calculated. A steady-state carrier population was revealed with a temperature 500 K above room temperature under illumination equivalent to one standard sun (100 mW/cm²). In addition, sice the carrier temperature increased with the power of illumination, a state filling effect is proposed as a reasonable cause for the elevated carrier temperature by comparative study of the CWPL spectra of Si QDs with three different sizes. These Si QDs show great potential for one of the steps towards a practical hot carrier solar cell (HCSC) device as high carrier temperatures can be achieved by state filling under mild illumination.

Original language	English (US)
Pages (from-to)	391-396
Number of pages	6
Journal	Solar Energy Materials and Solar Cells
Volume	145
DOIs	https://doi.org/10.1016/j.solmat.2015.11.002
State	Published - Feb 1 2016

Keywords

Hot carrier solar cell
Photoluminescence
Silicon quantum dots
State filling

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10.1016/j.solmat.2015.11.002

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1 Active
2 Finished

MRSEC IRG-2: Sustainable Nanocrystal Materials
Kortshagen, U. R., Aydil, E. S., Campbell, S. A., Francis, L. F., Haynes, C. L., Hogan, C., Mkhoyan, A., Shklovskii, B. I. & Wang, X.
9/1/98 → …
Project: Research project
University of Minnesota MRSEC (DMR-1420013)
Lodge, T.
11/1/14 → 10/31/20
Project: Research project
University of Minnesota MRSEC (DMR-0819885)
Lodge, T.
9/1/08 → 8/31/15
Project: Research project

Cite this

Generation of hot carrier population in colloidal silicon quantum dots for high-efficiency photovoltaics. / Zhang, Pengfei; Feng, Yu; Wen, Xiaoming; Cao, Wenkai; Anthony, Rebecca; Kortshagen, Uwe; Conibeer, Gavin; Huang, Shujuan.

In: Solar Energy Materials and Solar Cells, Vol. 145, 01.02.2016, p. 391-396.

Research output: Contribution to journal › Article › peer-review

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title = "Generation of hot carrier population in colloidal silicon quantum dots for high-efficiency photovoltaics",

abstract = "Hot carrier generation in silicon (Si) quantum dots (QDs) is studied with power dependent continuous wave photoluminescence (CWPL) spectroscopy. By taking sub-band gap absorption into account, a modified Maxwell-Boltzmann-form equation was employed to achieve accurate theoretical fitting to the CWPL spectra of the Si QDs. As a fitting parameter, the excited carrier temperature was calculated. A steady-state carrier population was revealed with a temperature 500 K above room temperature under illumination equivalent to one standard sun (100 mW/cm2). In addition, sice the carrier temperature increased with the power of illumination, a state filling effect is proposed as a reasonable cause for the elevated carrier temperature by comparative study of the CWPL spectra of Si QDs with three different sizes. These Si QDs show great potential for one of the steps towards a practical hot carrier solar cell (HCSC) device as high carrier temperatures can be achieved by state filling under mild illumination.",

keywords = "Hot carrier solar cell, Photoluminescence, Silicon quantum dots, State filling",

author = "Pengfei Zhang and Yu Feng and Xiaoming Wen and Wenkai Cao and Rebecca Anthony and Uwe Kortshagen and Gavin Conibeer and Shujuan Huang",

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doi = "10.1016/j.solmat.2015.11.002",

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AU - Zhang, Pengfei

AU - Feng, Yu

AU - Wen, Xiaoming

AU - Cao, Wenkai

AU - Anthony, Rebecca

AU - Kortshagen, Uwe

AU - Conibeer, Gavin

AU - Huang, Shujuan

PY - 2016/2/1

Y1 - 2016/2/1

N2 - Hot carrier generation in silicon (Si) quantum dots (QDs) is studied with power dependent continuous wave photoluminescence (CWPL) spectroscopy. By taking sub-band gap absorption into account, a modified Maxwell-Boltzmann-form equation was employed to achieve accurate theoretical fitting to the CWPL spectra of the Si QDs. As a fitting parameter, the excited carrier temperature was calculated. A steady-state carrier population was revealed with a temperature 500 K above room temperature under illumination equivalent to one standard sun (100 mW/cm2). In addition, sice the carrier temperature increased with the power of illumination, a state filling effect is proposed as a reasonable cause for the elevated carrier temperature by comparative study of the CWPL spectra of Si QDs with three different sizes. These Si QDs show great potential for one of the steps towards a practical hot carrier solar cell (HCSC) device as high carrier temperatures can be achieved by state filling under mild illumination.

AB - Hot carrier generation in silicon (Si) quantum dots (QDs) is studied with power dependent continuous wave photoluminescence (CWPL) spectroscopy. By taking sub-band gap absorption into account, a modified Maxwell-Boltzmann-form equation was employed to achieve accurate theoretical fitting to the CWPL spectra of the Si QDs. As a fitting parameter, the excited carrier temperature was calculated. A steady-state carrier population was revealed with a temperature 500 K above room temperature under illumination equivalent to one standard sun (100 mW/cm2). In addition, sice the carrier temperature increased with the power of illumination, a state filling effect is proposed as a reasonable cause for the elevated carrier temperature by comparative study of the CWPL spectra of Si QDs with three different sizes. These Si QDs show great potential for one of the steps towards a practical hot carrier solar cell (HCSC) device as high carrier temperatures can be achieved by state filling under mild illumination.

KW - Hot carrier solar cell

KW - Photoluminescence

KW - Silicon quantum dots

KW - State filling

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JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

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Generation of hot carrier population in colloidal silicon quantum dots for high-efficiency photovoltaics

Abstract

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

Access

MRSEC IRG-2: Sustainable Nanocrystal Materials

University of Minnesota MRSEC (DMR-1420013)

University of Minnesota MRSEC (DMR-0819885)

Cite this