Ge-on-SOI-detector/Si-CMOS-amplifier receivers for high-performance optical-communication applications

Steven J. Koester; Clint L. Schow; Laurent Schares; Gabriel Dehlinger; Jeremy D. Schaub; Fuad E. Doany; Richard A. John

doi:10.1109/JLT.2006.888923

Ge-on-SOI-detector/Si-CMOS-amplifier receivers for high-performance optical-communication applications

Steven J. Koester, Clint L. Schow, Laurent Schares, Gabriel Dehlinger, Jeremy D. Schaub, Fuad E. Doany, Richard A. John

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s with a sensitivity of -7.4 dBm (BER = 10^-12 while utilizing a single supply voltage of only 2.4 V. The 5-Gb/s sensitivity of similar receivers is constant up to 93 °C, and 10-Gb/s operation is demonstrated at 85 °C. Error-free BER < 10^-12 operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. A perspective on the future technological capabilities and applications of Ge-detector/Si-CMOS receivers is also provided.

Original language	English (US)
Article number	4137599
Pages (from-to)	46-57
Number of pages	12
Journal	Journal of Lightwave Technology
Volume	25
Issue number	1
DOIs	https://doi.org/10.1109/JLT.2006.888923
State	Published - Jan 2007

Bibliographical note

Funding Information:
Manuscript received July 14, 2006; revised November 20, 2006. This work was supported in part by the Defense Advanced Research Projects Agency under Contract MDA972-03-3-0004.

Keywords

CMOS
Germanium
Optical receivers
Photodetectors

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/JLT.2006.888923

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title = "Ge-on-SOI-detector/Si-CMOS-amplifier receivers for high-performance optical-communication applications",

abstract = "In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s with a sensitivity of -7.4 dBm (BER = 10-12 while utilizing a single supply voltage of only 2.4 V. The 5-Gb/s sensitivity of similar receivers is constant up to 93 °C, and 10-Gb/s operation is demonstrated at 85 °C. Error-free BER < 10-12 operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. A perspective on the future technological capabilities and applications of Ge-detector/Si-CMOS receivers is also provided.",

keywords = "CMOS, Germanium, Optical receivers, Photodetectors",

author = "Koester, {Steven J.} and Schow, {Clint L.} and Laurent Schares and Gabriel Dehlinger and Schaub, {Jeremy D.} and Doany, {Fuad E.} and John, {Richard A.}",

note = "Funding Information: Manuscript received July 14, 2006; revised November 20, 2006. This work was supported in part by the Defense Advanced Research Projects Agency under Contract MDA972-03-3-0004.",

year = "2007",

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doi = "10.1109/JLT.2006.888923",

language = "English (US)",

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T1 - Ge-on-SOI-detector/Si-CMOS-amplifier receivers for high-performance optical-communication applications

AU - Koester, Steven J.

AU - Schow, Clint L.

AU - Schares, Laurent

AU - Dehlinger, Gabriel

AU - Schaub, Jeremy D.

AU - Doany, Fuad E.

AU - John, Richard A.

N1 - Funding Information: Manuscript received July 14, 2006; revised November 20, 2006. This work was supported in part by the Defense Advanced Research Projects Agency under Contract MDA972-03-3-0004.

PY - 2007/1

Y1 - 2007/1

N2 - In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s with a sensitivity of -7.4 dBm (BER = 10-12 while utilizing a single supply voltage of only 2.4 V. The 5-Gb/s sensitivity of similar receivers is constant up to 93 °C, and 10-Gb/s operation is demonstrated at 85 °C. Error-free BER < 10-12 operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. A perspective on the future technological capabilities and applications of Ge-detector/Si-CMOS receivers is also provided.

AB - In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s with a sensitivity of -7.4 dBm (BER = 10-12 while utilizing a single supply voltage of only 2.4 V. The 5-Gb/s sensitivity of similar receivers is constant up to 93 °C, and 10-Gb/s operation is demonstrated at 85 °C. Error-free BER < 10-12 operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. A perspective on the future technological capabilities and applications of Ge-detector/Si-CMOS receivers is also provided.

KW - CMOS

KW - Germanium

KW - Optical receivers

KW - Photodetectors

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Ge-on-SOI-detector/Si-CMOS-amplifier receivers for high-performance optical-communication applications

Abstract

Bibliographical note

Keywords

UN SDGs

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