Ge implantation to improve crystallinity and productivity for solid phase epitaxy prepared by atomic mass unit cross contamination-free technique

Kong Soo Lee, Dae Han Yoo, Jae Jong Han, Gil Hwan Son, Chang Hun Lee, Ju Hee Noh, Seok Jae Kim, Yong Kwon Kim, Young Sub You, Yong Woo Hyung, Hyeon Deok Lee

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3 Scopus citations

Abstract

Germanium (Ge) ion implantation was investigated for crystallinity enhancement during solid phase epitaxial (SPE) regrowth. Electron back-scatter diffraction (EBSD) measurement showed numerical increase of 19% of (100) signal, which might be due to the effect of pre-amorphization implantation (PAI) on silicon layer. On the other hand, electrical property such as offleakage current of n-channel metal oxide semiconductor (NMOS) transistor degraded in specific regions of wafers. It was confirmed that arsenic (As) atoms were incorporated into channel area during Ge ion implantation. Since the equipment for Ge PAI was using several source gases such as BF3 and ASH3 atomic mass unit (AMU) contamination during PAI of Ge with AMU 74 caused the incorporation of As with AMU 75 which resided in arc-chamber and other parts of the equipment. It was effective to use Ge isotope of AMU 72 to suppress AMU contamination, It was effective to use enriched Ge source gas with AMU 72 in order to improve productivity.

Original languageEnglish (US)
Pages (from-to)L1193-L1196
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number42-45
DOIs
StatePublished - Nov 10 2006

Keywords

  • AMU contamination
  • Enriched Ge
  • Pre-amorphization implantation (PAI)
  • Ribbon-like wide beam
  • Solid phase epitaxy (SPE)

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