Gate-Tuned Insulator–Metal Transition in Electrolyte-Gated Transistors Based on Tellurene

Xinglong Ren, Yan Wang, Zuoti Xie, Feng Xue, Chris Leighton, C. Daniel Frisbie

Research output: Contribution to journalArticle

Original languageEnglish (US)
JournalNano Letters
DOIs
StatePublished - Jun 10 2019

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Cite this

Gate-Tuned Insulator–Metal Transition in Electrolyte-Gated Transistors Based on Tellurene. / Ren, Xinglong; Wang, Yan; Xie, Zuoti; Xue, Feng; Leighton, Chris; Frisbie, C. Daniel.

In: Nano Letters, 10.06.2019.

Research output: Contribution to journalArticle

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title = "Gate-Tuned Insulator–Metal Transition in Electrolyte-Gated Transistors Based on Tellurene",
author = "Xinglong Ren and Yan Wang and Zuoti Xie and Feng Xue and Chris Leighton and Frisbie, {C. Daniel}",
year = "2019",
month = "6",
day = "10",
doi = "10.1021/acs.nanolett.9b01827",
language = "English (US)",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",

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AU - Ren, Xinglong

AU - Wang, Yan

AU - Xie, Zuoti

AU - Xue, Feng

AU - Leighton, Chris

AU - Frisbie, C. Daniel

PY - 2019/6/10

Y1 - 2019/6/10

U2 - 10.1021/acs.nanolett.9b01827

DO - 10.1021/acs.nanolett.9b01827

M3 - Article

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

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