Gate-Tuned Insulator-Metal Transition in Electrolyte-Gated Transistors Based on Tellurene

Xinglong Ren, Yan Wang, Zuoti Xie, Feng Xue, Chris Leighton, C. Daniel Frisbie

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Tellurene is a recently discovered 2D material with high hole mobility and air stability, rendering it a good candidate for future applications in electronics, optoelectronics, and energy devices. However, the physical properties of tellurene remain poorly understood. In this paper, we report on the fabrication and characterization of high-performance electrolyte-gated transistors (EGTs) based on solution-grown tellurene flakes <30 nm in thickness. Both Hall measurements and resistance-temperature behavior down to 2 K are recorded at multiple gate voltages, and an electronic phase diagram is generated. The results show that it is possible to cross the insulator-metal transition in tellurene EGTs by tuning gate voltage, achieving mobility up to ?500 cm2 V-1 s-1. In particular, a truly metallic 2D state is observed at gate-induced hole densities >1 × 1013 cm-2, as confirmed by the temperature dependence of resistance and magnetoresistance measurements. Wide-range tuning of the electronic ground state of tellurene is thus achievable in EGTs, opening up new opportunities to realize electrical control of its physical properties.

Original languageEnglish (US)
Pages (from-to)4738-4744
Number of pages7
JournalNano Letters
Volume19
Issue number7
DOIs
StatePublished - Jul 10 2019

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Metal insulator transition
Electrolytes
Transistors
transistors
Physical properties
physical properties
transition metals
insulators
electrolytes
Hole mobility
flakes
hole mobility
Magnetoresistance
electronics
Optoelectronic devices
Ground state
Electronic equipment
Tuning
tuning
Fabrication

Keywords

  • 2D tellurene
  • Insulator-metal transition
  • charge transport
  • electrolyte gating

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 6

PubMed: MeSH publication types

  • Journal Article

Cite this

Gate-Tuned Insulator-Metal Transition in Electrolyte-Gated Transistors Based on Tellurene. / Ren, Xinglong; Wang, Yan; Xie, Zuoti; Xue, Feng; Leighton, Chris; Frisbie, C. Daniel.

In: Nano Letters, Vol. 19, No. 7, 10.07.2019, p. 4738-4744.

Research output: Contribution to journalArticle

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AU - Frisbie, C. Daniel

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N2 - Tellurene is a recently discovered 2D material with high hole mobility and air stability, rendering it a good candidate for future applications in electronics, optoelectronics, and energy devices. However, the physical properties of tellurene remain poorly understood. In this paper, we report on the fabrication and characterization of high-performance electrolyte-gated transistors (EGTs) based on solution-grown tellurene flakes <30 nm in thickness. Both Hall measurements and resistance-temperature behavior down to 2 K are recorded at multiple gate voltages, and an electronic phase diagram is generated. The results show that it is possible to cross the insulator-metal transition in tellurene EGTs by tuning gate voltage, achieving mobility up to ?500 cm2 V-1 s-1. In particular, a truly metallic 2D state is observed at gate-induced hole densities >1 × 1013 cm-2, as confirmed by the temperature dependence of resistance and magnetoresistance measurements. Wide-range tuning of the electronic ground state of tellurene is thus achievable in EGTs, opening up new opportunities to realize electrical control of its physical properties.

AB - Tellurene is a recently discovered 2D material with high hole mobility and air stability, rendering it a good candidate for future applications in electronics, optoelectronics, and energy devices. However, the physical properties of tellurene remain poorly understood. In this paper, we report on the fabrication and characterization of high-performance electrolyte-gated transistors (EGTs) based on solution-grown tellurene flakes <30 nm in thickness. Both Hall measurements and resistance-temperature behavior down to 2 K are recorded at multiple gate voltages, and an electronic phase diagram is generated. The results show that it is possible to cross the insulator-metal transition in tellurene EGTs by tuning gate voltage, achieving mobility up to ?500 cm2 V-1 s-1. In particular, a truly metallic 2D state is observed at gate-induced hole densities >1 × 1013 cm-2, as confirmed by the temperature dependence of resistance and magnetoresistance measurements. Wide-range tuning of the electronic ground state of tellurene is thus achievable in EGTs, opening up new opportunities to realize electrical control of its physical properties.

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