Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs

Keyphrases

• Undoped Body 100%
• Gate Length 100%
• SOI MOSFET 100%
• Length Scaling 100%
• SOI Devices 100%
• Performance Scale 100%
• Series Resistance 50%
• Etching Process 50%
• Need for Improvement 50%
• Doping Process 50%
• 22 Nm Node 50%
• Technology Node 50%
• High Drive 50%
• Short-channel Control 50%
• Logic Application 50%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Nodes 100%
• Gate Length 100%
• Application Logic 50%
• Current Drive 50%
• Series Resistance 50%
• Control Channel 50%

Physics

• Field Effect Transistor 100%