Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs

Amlan Majumdar; Xinlin Wang; Arvind Kumar; Judson R. Holt; David Dobuzinsky; Raj Venigalla; Christine Ouyang; Steven J. Koester; Wilfried Haensch

doi:10.1109/LED.2009.2014086

Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs

Amlan Majumdar, Xinlin Wang, Arvind Kumar, Judson R. Holt, David Dobuzinsky, Raj Venigalla, Christine Ouyang, Steven J. Koester, Wilfried Haensch

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

In this letter, we show that undoped-body extremely thin SOI (ETSOI) MOSFETs with SOI thickness in the 4-6-nm range have excellent short-channel control down to 20-25-nm gate lengths, suitable for the 22-nm technology node and beyond. We demonstrate that 6-nm-thin ETSOI devices can deliver high drive currents required for logic applications. Finally, we bring to fore the need for improvements in etch and doping processes to reduce series resistance of 4-nm-thin ETSOI devices in order to make them a viable option for the 15-nm technology node.

Original language	English (US)
Pages (from-to)	413-415
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	4
DOIs	https://doi.org/10.1109/LED.2009.2014086
State	Published - Feb 26 2009

Keywords

CMOSFETs
Fully depleted SOI (FDSOI)

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10.1109/LED.2009.2014086

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abstract = "In this letter, we show that undoped-body extremely thin SOI (ETSOI) MOSFETs with SOI thickness in the 4-6-nm range have excellent short-channel control down to 20-25-nm gate lengths, suitable for the 22-nm technology node and beyond. We demonstrate that 6-nm-thin ETSOI devices can deliver high drive currents required for logic applications. Finally, we bring to fore the need for improvements in etch and doping processes to reduce series resistance of 4-nm-thin ETSOI devices in order to make them a viable option for the 15-nm technology node.",

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T1 - Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs

AU - Majumdar, Amlan

AU - Wang, Xinlin

AU - Kumar, Arvind

AU - Holt, Judson R.

AU - Dobuzinsky, David

AU - Venigalla, Raj

AU - Ouyang, Christine

AU - Koester, Steven J.

AU - Haensch, Wilfried

PY - 2009/2/26

Y1 - 2009/2/26

N2 - In this letter, we show that undoped-body extremely thin SOI (ETSOI) MOSFETs with SOI thickness in the 4-6-nm range have excellent short-channel control down to 20-25-nm gate lengths, suitable for the 22-nm technology node and beyond. We demonstrate that 6-nm-thin ETSOI devices can deliver high drive currents required for logic applications. Finally, we bring to fore the need for improvements in etch and doping processes to reduce series resistance of 4-nm-thin ETSOI devices in order to make them a viable option for the 15-nm technology node.

AB - In this letter, we show that undoped-body extremely thin SOI (ETSOI) MOSFETs with SOI thickness in the 4-6-nm range have excellent short-channel control down to 20-25-nm gate lengths, suitable for the 22-nm technology node and beyond. We demonstrate that 6-nm-thin ETSOI devices can deliver high drive currents required for logic applications. Finally, we bring to fore the need for improvements in etch and doping processes to reduce series resistance of 4-nm-thin ETSOI devices in order to make them a viable option for the 15-nm technology node.

KW - CMOSFETs

KW - Fully depleted SOI (FDSOI)

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Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs

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