Abstract
Two-dimensional simulation of a rapid thermal processing (RTP) reactor is used to determine the radiative heating and the radiative and convective cooling. The gas flow patterns are found to be a strong function of temperature. Edge losses dominate the wafer thermal nonuniformity at high temperature, while convective cooling dominates at low temperature. A peak in the stress is found under transient conditions. To validate the model, some of the results are compared to experimental data from a small custom RTP system.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 921-924 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - Dec 1990 |
| Event | 1990 International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 9 1990 → Dec 12 1990 |