Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator

A. V. Riazanova, B. N. Costanzi, A. Aristov, Y. G.M. Rikers, V. Ström, J. J.L. Mulders, A. V. Kabashin, E. Dan Dahlberg, L. M. Belova

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Abstract

An oxygen-assisted electron-beam-induced deposition (EBID) process, in which an oxygen flow and the vapor phase of the precursor, tetraethyl orthosilicate (TEOS), are both mixed and delivered through a single needle, is described. The optical properties of the SiO(2+δ) (- 0.04 ≤ δ ≤ +0.28) are comparable to fused silica. The electrical resistivity of both single-needle and double-needle SiO(2+δ) are comparable (greater than 7 GΩ cm) and a measured breakdown field is greater than 400 V μm-1. Compared to the double-needle process the advantage of the single-needle technique is the ease of alignment and the proximity to the deposition location, which facilitates fabrication of complex 3D structures for nanophotonics, photovoltaics, micro- and nano-electronics applications.

Original languageEnglish (US)
Article number155301
JournalNanotechnology
Volume25
Issue number15
DOIs
StatePublished - Apr 18 2014

Keywords

  • 3D nanopatterning
  • gas assisted EBID
  • highpurity insulator
  • purification
  • tetraethyl orthosilicate (TEOS)

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    Riazanova, A. V., Costanzi, B. N., Aristov, A., Rikers, Y. G. M., Ström, V., Mulders, J. J. L., Kabashin, A. V., Dahlberg, E. D., & Belova, L. M. (2014). Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator. Nanotechnology, 25(15), [155301]. https://doi.org/10.1088/0957-4484/25/15/155301