Gap-inhomogeneity-induced electronic States in superconducting Bi2Sr2CaCu2O8+Î

A. C. Fang, L. Capriotti, D. J. Scalapino, S. A. Kivelson, N. Kaneko, M. Greven, A. Kapitulnik

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Abstract

In this Letter, we analyze, using scanning tunneling spectroscopy, the density of electronic states in nearly optimally doped Bi2Sr2CaCu2O8+Îin zero magnetic field. Focusing on the superconducting gap, we find patches of what appear to be two different phases in a background of some average gap, one with a relatively small gap and sharp large coherence peaks and one characterized by a large gap with broad weak coherence peaks. We compare these spectra with calculations of the local density of states for a simple phenomenological model in which a 2Î0Ã-2Î0 patch with an enhanced or suppressed d-wave gap amplitude is embedded in a region with a uniform average d-wave gap.

Original languageEnglish (US)
Article number017007
JournalPhysical review letters
Volume96
Issue number1
DOIs
StatePublished - Jan 13 2006

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