GaN solid state electron emitter

A. I. Akinwande; R. D. Horning; B. L. Goldenberg; P. Paul Ruden; John King

GaN solid state electron emitter

A. I. Akinwande
, R. D. Horning
, B. L. Goldenberg
, P. Paul Ruden
, John King

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

This paper describes a low voltage, room temperature electron emitter that is based on the AlGaN UV opto-electronic cathode. It consists of an ultraviolet light emitting diode (UV LED) in direct contact with a photoemitter. Presented are the results of the UV LED fabrication showing band-edge emission at 380 nm and the results of experiments on UV emission from thin e-beam evaporated LaB₆ and CeB₆ films which are the components required for the fabrication of the cold-cathode. Relevant results from Monte Carlo simulations of transport through LaB₆ are discussed.

Original language	English (US)
Title of host publication	Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Publisher	IEEE
Number of pages	1
State	Published - Dec 1 1995
Event	Proceedings of the 1995 8th International Vacuum Microelectronics Conference, IVMC'95 - Portland, OR, USA Duration: Jul 30 1995 → Aug 3 1995

Other

Other	Proceedings of the 1995 8th International Vacuum Microelectronics Conference, IVMC'95
City	Portland, OR, USA
Period	7/30/95 → 8/3/95

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@inproceedings{69cb403973fc423b9d9938aa37c4c472,

title = "GaN solid state electron emitter",

abstract = "This paper describes a low voltage, room temperature electron emitter that is based on the AlGaN UV opto-electronic cathode. It consists of an ultraviolet light emitting diode (UV LED) in direct contact with a photoemitter. Presented are the results of the UV LED fabrication showing band-edge emission at 380 nm and the results of experiments on UV emission from thin e-beam evaporated LaB6 and CeB6 films which are the components required for the fabrication of the cold-cathode. Relevant results from Monte Carlo simulations of transport through LaB6 are discussed.",

author = "Akinwande, \{A. I.\} and Horning, \{R. D.\} and Goldenberg, \{B. L.\} and Ruden, \{P. Paul\} and John King",

year = "1995",

month = dec,

day = "1",

language = "English (US)",

booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",

publisher = "IEEE",

note = "Proceedings of the 1995 8th International Vacuum Microelectronics Conference, IVMC'95 ; Conference date: 30-07-1995 Through 03-08-1995",

}

TY - GEN

T1 - GaN solid state electron emitter

AU - Akinwande, A. I.

AU - Horning, R. D.

AU - Goldenberg, B. L.

AU - Ruden, P. Paul

AU - King, John

PY - 1995/12/1

Y1 - 1995/12/1

N2 - This paper describes a low voltage, room temperature electron emitter that is based on the AlGaN UV opto-electronic cathode. It consists of an ultraviolet light emitting diode (UV LED) in direct contact with a photoemitter. Presented are the results of the UV LED fabrication showing band-edge emission at 380 nm and the results of experiments on UV emission from thin e-beam evaporated LaB6 and CeB6 films which are the components required for the fabrication of the cold-cathode. Relevant results from Monte Carlo simulations of transport through LaB6 are discussed.

AB - This paper describes a low voltage, room temperature electron emitter that is based on the AlGaN UV opto-electronic cathode. It consists of an ultraviolet light emitting diode (UV LED) in direct contact with a photoemitter. Presented are the results of the UV LED fabrication showing band-edge emission at 380 nm and the results of experiments on UV emission from thin e-beam evaporated LaB6 and CeB6 films which are the components required for the fabrication of the cold-cathode. Relevant results from Monte Carlo simulations of transport through LaB6 are discussed.

UR - https://www.scopus.com/pages/publications/0029517591

UR - https://www.scopus.com/pages/publications/0029517591#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:0029517591

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

PB - IEEE

T2 - Proceedings of the 1995 8th International Vacuum Microelectronics Conference, IVMC'95

Y2 - 30 July 1995 through 3 August 1995

ER -

GaN solid state electron emitter

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