GaN solid state electron emitter

A. I. Akinwande, R. D. Horning, D. K. Arch, P. Paul Ruden, John King

Research output: Chapter in Book/Report/Conference proceedingConference contribution


A low voltage, room temperature electron emitter based on the GaN ultraviolet (UV) optoelectronic cathode is reported. It consists of an UV light emitting diode (LED) in direct contact with a photoemitter. The photons cause photoemission of electrons from the surface layer of low workfunction materials. The photoemitted electrons are collected by an anode or can be focused. Modulated electron emission is obtained by modulating the LED. A cold cathode design is introduced and the difficulties and limitations of this approach are discussed. An analysis method and design approach with a preferred material system that promises to achieve desirable characteristics are described.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Editors Anon
Number of pages6
StatePublished - Dec 1 1997
EventProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea
Duration: Aug 17 1997Aug 21 1997


OtherProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
CityKyongju, Korea


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