Gallium self-diffusion in gallium phosphide

Lei Wang; J. A. Wolk; L. Hsu; E. E. Haller; J. W. Erickson; M. Cardona; T. Ruf; J. P. Silveira; F. Briones

doi:10.1063/1.118705

Gallium self-diffusion in gallium phosphide

Lei Wang, J. A. Wolk, L. Hsu, E. E. Haller, J. W. Erickson, M. Cardona, T. Ruf, J. P. Silveira, F. Briones

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Abstract

Ga self-diffusion in gallium phosphide (GaP) is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy (SIMS) is used to monitor intermixing of ⁶⁹Ga and ⁷¹Ga between isotopically pure GaP epilayers which are grown by molecular beam epitaxy (MBE) on GaP substrates. The Ga self-diffusion coefficient in undoped GaP is determined to be D = 2.0 cm²s^-1 exp(-4.5 eV/k_BT) between 1000 and 1190 °C under phosphorus-rich condition. The self-diffusion entropy is found to be ∼4 k_B.

Original language	English (US)
Pages (from-to)	1831-1833
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	14
DOIs	https://doi.org/10.1063/1.118705
State	Published - Apr 7 1997

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title = "Gallium self-diffusion in gallium phosphide",

abstract = "Ga self-diffusion in gallium phosphide (GaP) is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy (SIMS) is used to monitor intermixing of 69Ga and 71Ga between isotopically pure GaP epilayers which are grown by molecular beam epitaxy (MBE) on GaP substrates. The Ga self-diffusion coefficient in undoped GaP is determined to be D = 2.0 cm2s-1 exp(-4.5 eV/kBT) between 1000 and 1190 °C under phosphorus-rich condition. The self-diffusion entropy is found to be ∼4 kB.",

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T1 - Gallium self-diffusion in gallium phosphide

AU - Wang, Lei

AU - Wolk, J. A.

AU - Hsu, L.

AU - Haller, E. E.

AU - Erickson, J. W.

AU - Cardona, M.

AU - Ruf, T.

AU - Silveira, J. P.

AU - Briones, F.

PY - 1997/4/7

Y1 - 1997/4/7

N2 - Ga self-diffusion in gallium phosphide (GaP) is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy (SIMS) is used to monitor intermixing of 69Ga and 71Ga between isotopically pure GaP epilayers which are grown by molecular beam epitaxy (MBE) on GaP substrates. The Ga self-diffusion coefficient in undoped GaP is determined to be D = 2.0 cm2s-1 exp(-4.5 eV/kBT) between 1000 and 1190 °C under phosphorus-rich condition. The self-diffusion entropy is found to be ∼4 kB.

AB - Ga self-diffusion in gallium phosphide (GaP) is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy (SIMS) is used to monitor intermixing of 69Ga and 71Ga between isotopically pure GaP epilayers which are grown by molecular beam epitaxy (MBE) on GaP substrates. The Ga self-diffusion coefficient in undoped GaP is determined to be D = 2.0 cm2s-1 exp(-4.5 eV/kBT) between 1000 and 1190 °C under phosphorus-rich condition. The self-diffusion entropy is found to be ∼4 kB.

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Gallium self-diffusion in gallium phosphide

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