GaAsSb/GaAs band alignment evaluation for long-wave photonic applications

S. R. Johnson; C. Z. Guo; S. Chaparro; Yu G. Sadofyev; J. Wang; Y. Cao; N. Samal; J. Xu; S. Q. Yu; D. Ding; Y. H. Zhang

doi:10.1016/S0022-0248(02)02294-7

GaAsSb/GaAs band alignment evaluation for long-wave photonic applications

S. R. Johnson
, C. Z. Guo
, S. Chaparro
, Yu G. Sadofyev
, J. Wang
, Y. Cao
, N. Samal
, J. Xu
, S. Q. Yu
, D. Ding
, Y. H. Zhang

Research output: Contribution to journal › Conference article › peer-review

44 Scopus citations

Abstract

The GaAsSb/GaAs conduction band alignment is determined to be almost flat (weak type-I) in the 0.3 Sb mole fraction neighborhood where 1300nm emission is observed. Based on photoluminescence measurements and modeling the bandgap bowing parameter of pseudomorphic GaAsSb on GaAs is determined to be -2.0 eV with the bowing distributed 45% to the conduction band. Using these parameters the GaAsSb band edge energies are determined over the 0.0 to 0.5 Sb mole fraction range. The effect of band alignment on electron-hole overlap and wavelength extension is discussed.

Original language	English (US)
Pages (from-to)	521-525
Number of pages	5
Journal	Journal of Crystal Growth
Volume	251
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(02)02294-7
State	Published - Apr 2003
Externally published	Yes
Event	Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: Sep 15 2002 → Sep 20 2002

Keywords

A3. Molecular beam epitaxy
B1. Antimonides
B2. Semiconducting III-V materials

Publisher link

10.1016/S0022-0248(02)02294-7

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@article{ced453003b0a4ac0a3f193c05f793c10,

title = "GaAsSb/GaAs band alignment evaluation for long-wave photonic applications",

abstract = "The GaAsSb/GaAs conduction band alignment is determined to be almost flat (weak type-I) in the 0.3 Sb mole fraction neighborhood where 1300nm emission is observed. Based on photoluminescence measurements and modeling the bandgap bowing parameter of pseudomorphic GaAsSb on GaAs is determined to be -2.0 eV with the bowing distributed 45\% to the conduction band. Using these parameters the GaAsSb band edge energies are determined over the 0.0 to 0.5 Sb mole fraction range. The effect of band alignment on electron-hole overlap and wavelength extension is discussed.",

keywords = "A3. Molecular beam epitaxy, B1. Antimonides, B2. Semiconducting III-V materials",

author = "Johnson, \{S. R.\} and Guo, \{C. Z.\} and S. Chaparro and Sadofyev, \{Yu G.\} and J. Wang and Y. Cao and N. Samal and J. Xu and Yu, \{S. Q.\} and D. Ding and Zhang, \{Y. H.\}",

year = "2003",

month = apr,

doi = "10.1016/S0022-0248(02)02294-7",

language = "English (US)",

volume = "251",

pages = "521--525",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Proceedings of the Molecular Beam Epitaxy 2002 ; Conference date: 15-09-2002 Through 20-09-2002",

}

TY - JOUR

T1 - GaAsSb/GaAs band alignment evaluation for long-wave photonic applications

AU - Johnson, S. R.

AU - Guo, C. Z.

AU - Chaparro, S.

AU - Sadofyev, Yu G.

AU - Wang, J.

AU - Cao, Y.

AU - Samal, N.

AU - Xu, J.

AU - Yu, S. Q.

AU - Ding, D.

AU - Zhang, Y. H.

PY - 2003/4

Y1 - 2003/4

N2 - The GaAsSb/GaAs conduction band alignment is determined to be almost flat (weak type-I) in the 0.3 Sb mole fraction neighborhood where 1300nm emission is observed. Based on photoluminescence measurements and modeling the bandgap bowing parameter of pseudomorphic GaAsSb on GaAs is determined to be -2.0 eV with the bowing distributed 45% to the conduction band. Using these parameters the GaAsSb band edge energies are determined over the 0.0 to 0.5 Sb mole fraction range. The effect of band alignment on electron-hole overlap and wavelength extension is discussed.

AB - The GaAsSb/GaAs conduction band alignment is determined to be almost flat (weak type-I) in the 0.3 Sb mole fraction neighborhood where 1300nm emission is observed. Based on photoluminescence measurements and modeling the bandgap bowing parameter of pseudomorphic GaAsSb on GaAs is determined to be -2.0 eV with the bowing distributed 45% to the conduction band. Using these parameters the GaAsSb band edge energies are determined over the 0.0 to 0.5 Sb mole fraction range. The effect of band alignment on electron-hole overlap and wavelength extension is discussed.

KW - A3. Molecular beam epitaxy

KW - B1. Antimonides

KW - B2. Semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/0037380510

UR - https://www.scopus.com/pages/publications/0037380510#tab=citedBy

U2 - 10.1016/S0022-0248(02)02294-7

DO - 10.1016/S0022-0248(02)02294-7

M3 - Conference article

AN - SCOPUS:0037380510

SN - 0022-0248

VL - 251

SP - 521

EP - 525

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - Proceedings of the Molecular Beam Epitaxy 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

GaAsSb/GaAs band alignment evaluation for long-wave photonic applications

Abstract

Keywords

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