GaAsSb/GaAs band alignment evaluation for long-wave photonic applications

S. R. Johnson; C. Z. Guo; S. Chaparro; Yu G. Sadofyev; J. Wang; Y. Cao; N. Samal; J. Xu; S. Q. Yu; D. Ding; Y. H. Zhang

doi:10.1016/S0022-0248(02)02294-7

GaAsSb/GaAs band alignment evaluation for long-wave photonic applications

S. R. Johnson, C. Z. Guo, S. Chaparro, Yu G. Sadofyev, J. Wang, Y. Cao, N. Samal, J. Xu, S. Q. Yu, D. Ding, Y. H. Zhang

Research output: Contribution to journal › Conference article › peer-review

44 Scopus citations

Abstract

The GaAsSb/GaAs conduction band alignment is determined to be almost flat (weak type-I) in the 0.3 Sb mole fraction neighborhood where 1300nm emission is observed. Based on photoluminescence measurements and modeling the bandgap bowing parameter of pseudomorphic GaAsSb on GaAs is determined to be -2.0 eV with the bowing distributed 45% to the conduction band. Using these parameters the GaAsSb band edge energies are determined over the 0.0 to 0.5 Sb mole fraction range. The effect of band alignment on electron-hole overlap and wavelength extension is discussed.

Original language	English (US)
Pages (from-to)	521-525
Number of pages	5
Journal	Journal of Crystal Growth
Volume	251
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(02)02294-7
State	Published - Apr 2003
Externally published	Yes
Event	Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: Sep 15 2002 → Sep 20 2002

Keywords

A3. Molecular beam epitaxy
B1. Antimonides
B2. Semiconducting III-V materials

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10.1016/S0022-0248(02)02294-7

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@article{ced453003b0a4ac0a3f193c05f793c10,

title = "GaAsSb/GaAs band alignment evaluation for long-wave photonic applications",

abstract = "The GaAsSb/GaAs conduction band alignment is determined to be almost flat (weak type-I) in the 0.3 Sb mole fraction neighborhood where 1300nm emission is observed. Based on photoluminescence measurements and modeling the bandgap bowing parameter of pseudomorphic GaAsSb on GaAs is determined to be -2.0 eV with the bowing distributed 45% to the conduction band. Using these parameters the GaAsSb band edge energies are determined over the 0.0 to 0.5 Sb mole fraction range. The effect of band alignment on electron-hole overlap and wavelength extension is discussed.",

keywords = "A3. Molecular beam epitaxy, B1. Antimonides, B2. Semiconducting III-V materials",

author = "Johnson, {S. R.} and Guo, {C. Z.} and S. Chaparro and Sadofyev, {Yu G.} and J. Wang and Y. Cao and N. Samal and J. Xu and Yu, {S. Q.} and D. Ding and Zhang, {Y. H.}",

year = "2003",

month = apr,

doi = "10.1016/S0022-0248(02)02294-7",

language = "English (US)",

volume = "251",

pages = "521--525",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Proceedings of the Molecular Beam Epitaxy 2002 ; Conference date: 15-09-2002 Through 20-09-2002",

}

TY - JOUR

T1 - GaAsSb/GaAs band alignment evaluation for long-wave photonic applications

AU - Johnson, S. R.

AU - Guo, C. Z.

AU - Chaparro, S.

AU - Sadofyev, Yu G.

AU - Wang, J.

AU - Cao, Y.

AU - Samal, N.

AU - Xu, J.

AU - Yu, S. Q.

AU - Ding, D.

AU - Zhang, Y. H.

PY - 2003/4

Y1 - 2003/4

N2 - The GaAsSb/GaAs conduction band alignment is determined to be almost flat (weak type-I) in the 0.3 Sb mole fraction neighborhood where 1300nm emission is observed. Based on photoluminescence measurements and modeling the bandgap bowing parameter of pseudomorphic GaAsSb on GaAs is determined to be -2.0 eV with the bowing distributed 45% to the conduction band. Using these parameters the GaAsSb band edge energies are determined over the 0.0 to 0.5 Sb mole fraction range. The effect of band alignment on electron-hole overlap and wavelength extension is discussed.

AB - The GaAsSb/GaAs conduction band alignment is determined to be almost flat (weak type-I) in the 0.3 Sb mole fraction neighborhood where 1300nm emission is observed. Based on photoluminescence measurements and modeling the bandgap bowing parameter of pseudomorphic GaAsSb on GaAs is determined to be -2.0 eV with the bowing distributed 45% to the conduction band. Using these parameters the GaAsSb band edge energies are determined over the 0.0 to 0.5 Sb mole fraction range. The effect of band alignment on electron-hole overlap and wavelength extension is discussed.

KW - A3. Molecular beam epitaxy

KW - B1. Antimonides

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=0037380510&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037380510&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)02294-7

DO - 10.1016/S0022-0248(02)02294-7

M3 - Conference article

AN - SCOPUS:0037380510

SN - 0022-0248

VL - 251

SP - 521

EP - 525

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - Proceedings of the Molecular Beam Epitaxy 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

GaAsSb/GaAs band alignment evaluation for long-wave photonic applications

Abstract

Keywords

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