GaAs-substrate-based long-wave active materials with type-II band alignments

S. R. Johnson; S. Chaparro; J. Wang; N. Samal; Y. Cao; Z. B. Chen; C. Navarro; J. Xu; S. Q. Yu; David J. Smith; C. Z. Guo; P. Dowd; W. Braun; Y. H. Zhang

doi:10.1116/1.1386380

GaAs-substrate-based long-wave active materials with type-II band alignments

S. R. Johnson
, S. Chaparro
, J. Wang
, N. Samal
, Y. Cao
, Z. B. Chen
, C. Navarro
, J. Xu
, S. Q. Yu
, David J. Smith
, C. Z. Guo
, P. Dowd
, W. Braun
, Y. H. Zhang

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

Evidence of the type-II alignment at the heterointerface between GaAsSb and InGaAs was obtained with the optimal layer configuration being the asymmetric GaAsSb/InGaAs bilayer. The suitability of GaAs/GaAsSb/GaAs and the strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP coupled-quantum-well system for long-wave applications was shown. Inhomogeneous linewidth broadening due to lateral composition and thickness modulation was dramatically reduced by the addition of GaAsP strain-compensation layers to GaAsSb-based trilayer quantum-well systems.

Original language	English (US)
Pages (from-to)	1501-1504
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1386380
State	Published - Jul 2001
Externally published	Yes
Event	19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: Oct 15 2000 → Oct 18 2000

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Johnson, S. R., Chaparro, S., Wang, J., Samal, N., Cao, Y., Chen, Z. B., Navarro, C., Xu, J., Yu, S. Q., Smith, D. J., Guo, C. Z., Dowd, P., Braun, W., & Zhang, Y. H. (2001). GaAs-substrate-based long-wave active materials with type-II band alignments. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19(4), 1501-1504. https://doi.org/10.1116/1.1386380

Johnson, SR, Chaparro, S, Wang, J, Samal, N, Cao, Y, Chen, ZB, Navarro, C, Xu, J, Yu, SQ, Smith, DJ, Guo, CZ, Dowd, P, Braun, W & Zhang, YH 2001, 'GaAs-substrate-based long-wave active materials with type-II band alignments', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 19, no. 4, pp. 1501-1504. https://doi.org/10.1116/1.1386380

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title = "GaAs-substrate-based long-wave active materials with type-II band alignments",

abstract = "Evidence of the type-II alignment at the heterointerface between GaAsSb and InGaAs was obtained with the optimal layer configuration being the asymmetric GaAsSb/InGaAs bilayer. The suitability of GaAs/GaAsSb/GaAs and the strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP coupled-quantum-well system for long-wave applications was shown. Inhomogeneous linewidth broadening due to lateral composition and thickness modulation was dramatically reduced by the addition of GaAsP strain-compensation layers to GaAsSb-based trilayer quantum-well systems.",

author = "Johnson, \{S. R.\} and S. Chaparro and J. Wang and N. Samal and Y. Cao and Chen, \{Z. B.\} and C. Navarro and J. Xu and Yu, \{S. Q.\} and Smith, \{David J.\} and Guo, \{C. Z.\} and P. Dowd and W. Braun and Zhang, \{Y. H.\}",

year = "2001",

month = jul,

doi = "10.1116/1.1386380",

language = "English (US)",

volume = "19",

pages = "1501--1504",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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number = "4",

note = "19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) ; Conference date: 15-10-2000 Through 18-10-2000",

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T1 - GaAs-substrate-based long-wave active materials with type-II band alignments

AU - Johnson, S. R.

AU - Chaparro, S.

AU - Wang, J.

AU - Samal, N.

AU - Cao, Y.

AU - Chen, Z. B.

AU - Navarro, C.

AU - Xu, J.

AU - Yu, S. Q.

AU - Smith, David J.

AU - Guo, C. Z.

AU - Dowd, P.

AU - Braun, W.

AU - Zhang, Y. H.

PY - 2001/7

Y1 - 2001/7

N2 - Evidence of the type-II alignment at the heterointerface between GaAsSb and InGaAs was obtained with the optimal layer configuration being the asymmetric GaAsSb/InGaAs bilayer. The suitability of GaAs/GaAsSb/GaAs and the strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP coupled-quantum-well system for long-wave applications was shown. Inhomogeneous linewidth broadening due to lateral composition and thickness modulation was dramatically reduced by the addition of GaAsP strain-compensation layers to GaAsSb-based trilayer quantum-well systems.

AB - Evidence of the type-II alignment at the heterointerface between GaAsSb and InGaAs was obtained with the optimal layer configuration being the asymmetric GaAsSb/InGaAs bilayer. The suitability of GaAs/GaAsSb/GaAs and the strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP coupled-quantum-well system for long-wave applications was shown. Inhomogeneous linewidth broadening due to lateral composition and thickness modulation was dramatically reduced by the addition of GaAsP strain-compensation layers to GaAsSb-based trilayer quantum-well systems.

UR - https://www.scopus.com/pages/publications/0035535318

UR - https://www.scopus.com/pages/publications/0035535318#tab=citedBy

U2 - 10.1116/1.1386380

DO - 10.1116/1.1386380

M3 - Conference article

AN - SCOPUS:0035535318

SN - 1071-1023

VL - 19

SP - 1501

EP - 1504

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19)

Y2 - 15 October 2000 through 18 October 2000

ER -

GaAs-substrate-based long-wave active materials with type-II band alignments

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