GaAs-substrate-based long-wave active materials with type-II band alignments

S. R. Johnson; S. Chaparro; J. Wang; N. Samal; Y. Cao; Z. B. Chen; C. Navarro; J. Xu; S. Q. Yu; David J. Smith; C. Z. Guo; P. Dowd; W. Braun; Y. H. Zhang

doi:10.1116/1.1386380

GaAs-substrate-based long-wave active materials with type-II band alignments

S. R. Johnson, S. Chaparro, J. Wang, N. Samal, Y. Cao, Z. B. Chen, C. Navarro, J. Xu, S. Q. Yu, David J. Smith, C. Z. Guo, P. Dowd, W. Braun, Y. H. Zhang

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

Evidence of the type-II alignment at the heterointerface between GaAsSb and InGaAs was obtained with the optimal layer configuration being the asymmetric GaAsSb/InGaAs bilayer. The suitability of GaAs/GaAsSb/GaAs and the strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP coupled-quantum-well system for long-wave applications was shown. Inhomogeneous linewidth broadening due to lateral composition and thickness modulation was dramatically reduced by the addition of GaAsP strain-compensation layers to GaAsSb-based trilayer quantum-well systems.

Original language	English (US)
Pages (from-to)	1501-1504
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1386380
State	Published - Jul 2001
Externally published	Yes
Event	19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: Oct 15 2000 → Oct 18 2000

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Johnson, S. R., Chaparro, S., Wang, J., Samal, N., Cao, Y., Chen, Z. B., Navarro, C., Xu, J., Yu, S. Q., Smith, D. J., Guo, C. Z., Dowd, P., Braun, W., & Zhang, Y. H. (2001). GaAs-substrate-based long-wave active materials with type-II band alignments. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19(4), 1501-1504. https://doi.org/10.1116/1.1386380

Johnson, SR, Chaparro, S, Wang, J, Samal, N, Cao, Y, Chen, ZB, Navarro, C, Xu, J, Yu, SQ, Smith, DJ, Guo, CZ, Dowd, P, Braun, W & Zhang, YH 2001, 'GaAs-substrate-based long-wave active materials with type-II band alignments', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 19, no. 4, pp. 1501-1504. https://doi.org/10.1116/1.1386380

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title = "GaAs-substrate-based long-wave active materials with type-II band alignments",

abstract = "Evidence of the type-II alignment at the heterointerface between GaAsSb and InGaAs was obtained with the optimal layer configuration being the asymmetric GaAsSb/InGaAs bilayer. The suitability of GaAs/GaAsSb/GaAs and the strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP coupled-quantum-well system for long-wave applications was shown. Inhomogeneous linewidth broadening due to lateral composition and thickness modulation was dramatically reduced by the addition of GaAsP strain-compensation layers to GaAsSb-based trilayer quantum-well systems.",

author = "Johnson, {S. R.} and S. Chaparro and J. Wang and N. Samal and Y. Cao and Chen, {Z. B.} and C. Navarro and J. Xu and Yu, {S. Q.} and Smith, {David J.} and Guo, {C. Z.} and P. Dowd and W. Braun and Zhang, {Y. H.}",

year = "2001",

month = jul,

doi = "10.1116/1.1386380",

language = "English (US)",

volume = "19",

pages = "1501--1504",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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note = "19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) ; Conference date: 15-10-2000 Through 18-10-2000",

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T1 - GaAs-substrate-based long-wave active materials with type-II band alignments

AU - Johnson, S. R.

AU - Chaparro, S.

AU - Wang, J.

AU - Samal, N.

AU - Cao, Y.

AU - Chen, Z. B.

AU - Navarro, C.

AU - Xu, J.

AU - Yu, S. Q.

AU - Smith, David J.

AU - Guo, C. Z.

AU - Dowd, P.

AU - Braun, W.

AU - Zhang, Y. H.

PY - 2001/7

Y1 - 2001/7

N2 - Evidence of the type-II alignment at the heterointerface between GaAsSb and InGaAs was obtained with the optimal layer configuration being the asymmetric GaAsSb/InGaAs bilayer. The suitability of GaAs/GaAsSb/GaAs and the strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP coupled-quantum-well system for long-wave applications was shown. Inhomogeneous linewidth broadening due to lateral composition and thickness modulation was dramatically reduced by the addition of GaAsP strain-compensation layers to GaAsSb-based trilayer quantum-well systems.

AB - Evidence of the type-II alignment at the heterointerface between GaAsSb and InGaAs was obtained with the optimal layer configuration being the asymmetric GaAsSb/InGaAs bilayer. The suitability of GaAs/GaAsSb/GaAs and the strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP coupled-quantum-well system for long-wave applications was shown. Inhomogeneous linewidth broadening due to lateral composition and thickness modulation was dramatically reduced by the addition of GaAsP strain-compensation layers to GaAsSb-based trilayer quantum-well systems.

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M3 - Conference article

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EP - 1504

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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T2 - 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19)

Y2 - 15 October 2000 through 18 October 2000

ER -

GaAs-substrate-based long-wave active materials with type-II band alignments

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