GaAs MOS Capacitors and Self-Aligned MOSFETs with HfO2 Gate Dielectrics

S. J. Koester; E. W. Kiewra; Yanning Sun; D. A. Neumayer; J. A. Ott; D. K. Sadana; D. J. Webb; J. Fompeyrine; J. P. Locquet; M. Sousa; R. Germann

GaAs MOS Capacitors and Self-Aligned MOSFETs with HfO₂ Gate Dielectrics

S. J. Koester, E. W. Kiewra, Yanning Sun, D. A. Neumayer, J. A. Ott, D. K. Sadana, D. J. Webb, J. Fompeyrine, J. P. Locquet, M. Sousa, R. Germann

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Original language	English (US)
Title of host publication	64th DRC 2006 - Device Research Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	43-44
Number of pages	2
ISBN (Electronic)	0780397495, 9780780397491
State	Published - 2006
Externally published	Yes
Event	64th Device Research Conference, DRC 2006 - Parker, United States Duration: Jun 26 2006 → Jun 28 2006

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	64th Device Research Conference, DRC 2006
Country/Territory	United States
City	Parker
Period	6/26/06 → 6/28/06

Find It

Find It at U of M Libraries

Cite this

Koester, S. J., Kiewra, E. W., Sun, Y., Neumayer, D. A., Ott, J. A., Sadana, D. K., Webb, D. J., Fompeyrine, J., Locquet, J. P., Sousa, M., & Germann, R. (2006). GaAs MOS Capacitors and Self-Aligned MOSFETs with HfO₂ Gate Dielectrics. In 64th DRC 2006 - Device Research Conference (pp. 43-44). (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc..

GaAs MOS Capacitors and Self-Aligned MOSFETs with HfO₂ Gate Dielectrics. / Koester, S. J.; Kiewra, E. W.; Sun, Yanning et al.
64th DRC 2006 - Device Research Conference. Institute of Electrical and Electronics Engineers Inc., 2006. p. 43-44 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Koester, SJ, Kiewra, EW, Sun, Y, Neumayer, DA, Ott, JA, Sadana, DK, Webb, DJ, Fompeyrine, J, Locquet, JP, Sousa, M & Germann, R 2006, GaAs MOS Capacitors and Self-Aligned MOSFETs with HfO₂ Gate Dielectrics. in 64th DRC 2006 - Device Research Conference. Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 43-44, 64th Device Research Conference, DRC 2006, Parker, United States, 6/26/06.

@inproceedings{cf32559b5bae4a82bc49ab09edac77cc,

title = "GaAs MOS Capacitors and Self-Aligned MOSFETs with HfO2 Gate Dielectrics",

author = "Koester, {S. J.} and Kiewra, {E. W.} and Yanning Sun and Neumayer, {D. A.} and Ott, {J. A.} and Sadana, {D. K.} and Webb, {D. J.} and J. Fompeyrine and Locquet, {J. P.} and M. Sousa and R. Germann",

year = "2006",

language = "English (US)",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "43--44",

booktitle = "64th DRC 2006 - Device Research Conference",

note = "64th Device Research Conference, DRC 2006 ; Conference date: 26-06-2006 Through 28-06-2006",

}

TY - GEN

T1 - GaAs MOS Capacitors and Self-Aligned MOSFETs with HfO2 Gate Dielectrics

AU - Koester, S. J.

AU - Kiewra, E. W.

AU - Sun, Yanning

AU - Neumayer, D. A.

AU - Ott, J. A.

AU - Sadana, D. K.

AU - Webb, D. J.

AU - Fompeyrine, J.

AU - Locquet, J. P.

AU - Sousa, M.

AU - Germann, R.

PY - 2006

Y1 - 2006

UR - http://www.scopus.com/inward/record.url?scp=78650095310&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650095310&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:78650095310

T3 - Device Research Conference - Conference Digest, DRC

SP - 43

EP - 44

BT - 64th DRC 2006 - Device Research Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Device Research Conference, DRC 2006

Y2 - 26 June 2006 through 28 June 2006