GaAs MESFETs with channel-doping variations

Z. Abid, A. Gopinath, B. Meskoob, S. Prasad

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


GaAs MESFETs with two new types of channel doping profiles, the falling exponential and the hi-lo-hi profile, have been investigated. A 2-D drift-diffusion simulation program, PISCES, was used for the design and optimization of the desired device characteristics. The results show excellent linear dependence of the gate-source capacitance and transconductance on the gate-source voltage for the falling exponential design, while high nonlinearity was achieved in the hi-lo-hi doping profile. Thus, channel doping profiles may be designed to tailor the capacitance and transconductance variations with gate-source voltage to suit the particular applications.

Original languageEnglish (US)
Pages (from-to)1427-1432
Number of pages6
JournalSolid State Electronics
Issue number12
StatePublished - Dec 1991

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