TY - JOUR
T1 - GaAs MESFETs with channel-doping variations
AU - Abid, Z.
AU - Gopinath, A.
AU - Meskoob, B.
AU - Prasad, S.
PY - 1991/12
Y1 - 1991/12
N2 - GaAs MESFETs with two new types of channel doping profiles, the falling exponential and the hi-lo-hi profile, have been investigated. A 2-D drift-diffusion simulation program, PISCES, was used for the design and optimization of the desired device characteristics. The results show excellent linear dependence of the gate-source capacitance and transconductance on the gate-source voltage for the falling exponential design, while high nonlinearity was achieved in the hi-lo-hi doping profile. Thus, channel doping profiles may be designed to tailor the capacitance and transconductance variations with gate-source voltage to suit the particular applications.
AB - GaAs MESFETs with two new types of channel doping profiles, the falling exponential and the hi-lo-hi profile, have been investigated. A 2-D drift-diffusion simulation program, PISCES, was used for the design and optimization of the desired device characteristics. The results show excellent linear dependence of the gate-source capacitance and transconductance on the gate-source voltage for the falling exponential design, while high nonlinearity was achieved in the hi-lo-hi doping profile. Thus, channel doping profiles may be designed to tailor the capacitance and transconductance variations with gate-source voltage to suit the particular applications.
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U2 - 10.1016/0038-1101(91)90040-6
DO - 10.1016/0038-1101(91)90040-6
M3 - Article
AN - SCOPUS:0026394274
SN - 0038-1101
VL - 34
SP - 1427
EP - 1432
JO - Solid State Electronics
JF - Solid State Electronics
IS - 12
ER -