Ga self-diffusion in GaAs isotope heterostructures

Lei Wang, Leon Hsu, E. E. Haller, Jon W. Erickson, A. Fischer, K. Eberl, M. Cardona

Research output: Contribution to journalArticlepeer-review

61 Scopus citations


Isotopically controlled GaAs heterostructures have been used to study Ga self-diffusion with secondary-ion mass spectrometry. This approach probes a close to ideal random walk problem, free from perturbations such as electric fields, mechanical stresses, or chemical potentials. The Ga self-diffusion coefficient in intrinsic GaAs can be well described with D = (43 ± 25) exp [−4.24 ± 0.06 e V)/kB T] over 6 orders of magnitude between 800 and 1225 ° C under As-rich condition. No significant doping effects are observed in samples with their substrates doped with Te up to 4 × 1017 cm−3 or Zn up to 1 × 1019 cm−3. Our results substantiate some of the findings in recent theoretical work.

Original languageEnglish (US)
Pages (from-to)2342-2345
Number of pages4
JournalPhysical review letters
Issue number13
StatePublished - 1996
Externally publishedYes


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