Functionally Graded Interfaces: Role and Origin of Internal Electric Field and Modulated Electrical Response

Deepam Maurya, Yuan Zhou, Bo Chen, Min Gyu Kang, Peter Nguyen, Mantu K. Hudait, Shashank Priya

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


We report the tunable electrical response in functionally graded interfaces in lead-free ferroelectric thin films. Multilayer thin film graded heterostructures were synthesized on platinized silicon substrate with oxide layers of varying thickness. Interestingly, the graded heterostructure thin films exhibited shift of the hysteresis loops on electric field and polarization axes depending upon the direction of an applied bias. A diode-like characteristics was observed in current-voltage behavior under forward and reverse bias. This modulated electrical behavior was attributed to the perturbed dynamics of charge carriers under internal bias (self-bias) generated due to the increased skewness of the potential wells. The cyclic sweeping of voltage further demonstrated memristor-like current-voltage behavior in functionally graded heterostructure devices. The presence of an internal bias assisted the generation of photocurrent by facilitating the separation of photogenerated charges. These novel findings provide opportunity to design new circuit components for the next generation of microelectronic device architectures.

Original languageEnglish (US)
Pages (from-to)22458-22468
Number of pages11
JournalACS Applied Materials and Interfaces
Issue number40
StatePublished - Oct 14 2015
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2015 American Chemical Society.


  • electrical transport
  • ferroelectric
  • functionally graded interfaces
  • internal bias
  • thin film


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