Abstract
The flexibility and quasi-one-dimensional nature of nanowires offer wide-ranging possibilities for novel heterostructure design and strain engineering. In this work, we realized controllably bent Si nanowires by using asymmetric growth with electron beam evaporation system. It is demonstrated that the degree of arc-bending depends on the deposition angle and deposition thickness. The forward bending of the Si nanowires is due to the lattice mismatch and thermal mismatch between Si and the metallic materials such as Cr and Ti, which can be generally utilized to control the shape and internal strain of Si nanowires, with potential applications for fabricating desired nano-devices.
Original language | English (US) |
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Article number | 129929 |
Journal | Materials Letters |
Volume | 297 |
DOIs | |
State | Published - Aug 15 2021 |
Bibliographical note
Funding Information:This work was supported financially by the National Key Research and Development Program of China (No. 2018YFB2200500 ), National Natural Science Foundation of China (Nos. 11975176 , 61904146 ), Key Research and Development Program of Shaanxi Province (No. 2020KW-011 ), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Nos. 2021JQ-658 , 2019JM-139 ), Science and Technology Plan Project of Xi’an (No. 2020KJRC0026 ).
Funding Information:
This work was supported financially by the National Key Research and Development Program of China (No. 2018YFB2200500), National Natural Science Foundation of China (Nos. 11975176, 61904146), Key Research and Development Program of Shaanxi Province (No. 2020KW-011), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Nos. 2021JQ-658, 2019JM-139), Science and Technology Plan Project of Xi'an (No. 2020KJRC0026).
Publisher Copyright:
© 2021 Elsevier B.V.
Keywords
- Asymmetric growth
- Bending
- Raman
- Semiconductors
- Silicon nanowires