Forward bending of silicon nanowires induced by strain distribution in asymmetric growth

Yongkang Xu; Lianbi Li; Yuan Zang; Jichao Hu; Zebin Li; Hong Chen; Guoqing Zhang; Caijuan Xia; Jeong Hyun Cho

doi:10.1016/j.matlet.2021.129929

Forward bending of silicon nanowires induced by strain distribution in asymmetric growth

Yongkang Xu, Lianbi Li, Yuan Zang, Jichao Hu, Zebin Li, Hong Chen, Guoqing Zhang, Caijuan Xia, Jeong Hyun Cho

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The flexibility and quasi-one-dimensional nature of nanowires offer wide-ranging possibilities for novel heterostructure design and strain engineering. In this work, we realized controllably bent Si nanowires by using asymmetric growth with electron beam evaporation system. It is demonstrated that the degree of arc-bending depends on the deposition angle and deposition thickness. The forward bending of the Si nanowires is due to the lattice mismatch and thermal mismatch between Si and the metallic materials such as Cr and Ti, which can be generally utilized to control the shape and internal strain of Si nanowires, with potential applications for fabricating desired nano-devices.

Original language	English (US)
Article number	129929
Journal	Materials Letters
Volume	297
DOIs	https://doi.org/10.1016/j.matlet.2021.129929
State	Published - Aug 15 2021

Bibliographical note

Funding Information:
This work was supported financially by the National Key Research and Development Program of China (No. 2018YFB2200500 ), National Natural Science Foundation of China (Nos. 11975176 , 61904146 ), Key Research and Development Program of Shaanxi Province (No. 2020KW-011 ), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Nos. 2021JQ-658 , 2019JM-139 ), Science and Technology Plan Project of Xi’an (No. 2020KJRC0026 ).

Funding Information:
This work was supported financially by the National Key Research and Development Program of China (No. 2018YFB2200500), National Natural Science Foundation of China (Nos. 11975176, 61904146), Key Research and Development Program of Shaanxi Province (No. 2020KW-011), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Nos. 2021JQ-658, 2019JM-139), Science and Technology Plan Project of Xi'an (No. 2020KJRC0026).

Publisher Copyright:
© 2021 Elsevier B.V.

Keywords

Asymmetric growth
Bending
Raman
Semiconductors
Silicon nanowires

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10.1016/j.matlet.2021.129929

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title = "Forward bending of silicon nanowires induced by strain distribution in asymmetric growth",

abstract = "The flexibility and quasi-one-dimensional nature of nanowires offer wide-ranging possibilities for novel heterostructure design and strain engineering. In this work, we realized controllably bent Si nanowires by using asymmetric growth with electron beam evaporation system. It is demonstrated that the degree of arc-bending depends on the deposition angle and deposition thickness. The forward bending of the Si nanowires is due to the lattice mismatch and thermal mismatch between Si and the metallic materials such as Cr and Ti, which can be generally utilized to control the shape and internal strain of Si nanowires, with potential applications for fabricating desired nano-devices.",

keywords = "Asymmetric growth, Bending, Raman, Semiconductors, Silicon nanowires",

author = "Yongkang Xu and Lianbi Li and Yuan Zang and Jichao Hu and Zebin Li and Hong Chen and Guoqing Zhang and Caijuan Xia and Cho, {Jeong Hyun}",

note = "Funding Information: This work was supported financially by the National Key Research and Development Program of China (No. 2018YFB2200500 ), National Natural Science Foundation of China (Nos. 11975176 , 61904146 ), Key Research and Development Program of Shaanxi Province (No. 2020KW-011 ), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Nos. 2021JQ-658 , 2019JM-139 ), Science and Technology Plan Project of Xi{\textquoteright}an (No. 2020KJRC0026 ). Funding Information: This work was supported financially by the National Key Research and Development Program of China (No. 2018YFB2200500), National Natural Science Foundation of China (Nos. 11975176, 61904146), Key Research and Development Program of Shaanxi Province (No. 2020KW-011), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Nos. 2021JQ-658, 2019JM-139), Science and Technology Plan Project of Xi'an (No. 2020KJRC0026). Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

month = aug,

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doi = "10.1016/j.matlet.2021.129929",

language = "English (US)",

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journal = "Materials Letters",

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T1 - Forward bending of silicon nanowires induced by strain distribution in asymmetric growth

AU - Xu, Yongkang

AU - Li, Lianbi

AU - Zang, Yuan

AU - Hu, Jichao

AU - Li, Zebin

AU - Chen, Hong

AU - Zhang, Guoqing

AU - Xia, Caijuan

AU - Cho, Jeong Hyun

N1 - Funding Information: This work was supported financially by the National Key Research and Development Program of China (No. 2018YFB2200500 ), National Natural Science Foundation of China (Nos. 11975176 , 61904146 ), Key Research and Development Program of Shaanxi Province (No. 2020KW-011 ), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Nos. 2021JQ-658 , 2019JM-139 ), Science and Technology Plan Project of Xi’an (No. 2020KJRC0026 ). Funding Information: This work was supported financially by the National Key Research and Development Program of China (No. 2018YFB2200500), National Natural Science Foundation of China (Nos. 11975176, 61904146), Key Research and Development Program of Shaanxi Province (No. 2020KW-011), the Project supported by Natural Science Basic Research Plan in Shaanxi Province of China (Nos. 2021JQ-658, 2019JM-139), Science and Technology Plan Project of Xi'an (No. 2020KJRC0026). Publisher Copyright: © 2021 Elsevier B.V.

PY - 2021/8/15

Y1 - 2021/8/15

N2 - The flexibility and quasi-one-dimensional nature of nanowires offer wide-ranging possibilities for novel heterostructure design and strain engineering. In this work, we realized controllably bent Si nanowires by using asymmetric growth with electron beam evaporation system. It is demonstrated that the degree of arc-bending depends on the deposition angle and deposition thickness. The forward bending of the Si nanowires is due to the lattice mismatch and thermal mismatch between Si and the metallic materials such as Cr and Ti, which can be generally utilized to control the shape and internal strain of Si nanowires, with potential applications for fabricating desired nano-devices.

AB - The flexibility and quasi-one-dimensional nature of nanowires offer wide-ranging possibilities for novel heterostructure design and strain engineering. In this work, we realized controllably bent Si nanowires by using asymmetric growth with electron beam evaporation system. It is demonstrated that the degree of arc-bending depends on the deposition angle and deposition thickness. The forward bending of the Si nanowires is due to the lattice mismatch and thermal mismatch between Si and the metallic materials such as Cr and Ti, which can be generally utilized to control the shape and internal strain of Si nanowires, with potential applications for fabricating desired nano-devices.

KW - Asymmetric growth

KW - Bending

KW - Raman

KW - Semiconductors

KW - Silicon nanowires

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Forward bending of silicon nanowires induced by strain distribution in asymmetric growth

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