Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature

Nicholas V. Proscia; Zav Shoton; Harishankar Jayakumar; Prithvi Reddy; Michael Dollar; Marcus Doherty; Audrius Alkauskas; Carlos A. Meriles; Vinod M. Menon

doi:10.1364/CLEO_QELS.2018.FTu4H.1

Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature

Nicholas V. Proscia
, Zav Shoton
, Harishankar Jayakumar
, Prithvi Reddy
, Michael Dollar
, Marcus Doherty
, Audrius Alkauskas
, Carlos A. Meriles
, Vinod M. Menon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Room temperature quantum emitter arrays are created in hexagonal Boron Nitride (hBN) by deterministic activation via strain engineering on a nanopillar substrate. Emitters are localized at pillar edges where the hBN film undergoes maximum strain.

Original language	English (US)
Title of host publication	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
Subtitle of host publication	QELS_Fundamental Science, CLEO_QELS 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781557528209
ISBN (Print)	9781943580422
DOIs	https://doi.org/10.1364/CLEO_QELS.2018.FTu4H.1
State	Published - Aug 6 2018
Externally published	Yes
Event	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - San Jose, United States Duration: May 13 2018 → May 18 2018

Publication series

Name	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

Other

Other	2018 Conference on Lasers and Electro-Optics, CLEO 2018
Country/Territory	United States
City	San Jose
Period	5/13/18 → 5/18/18

Bibliographical note

Publisher Copyright:
© 2018 OSA.

Publisher link

10.1364/CLEO_QELS.2018.FTu4H.1

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Proscia, N. V., Shoton, Z., Jayakumar, H., Reddy, P., Dollar, M., Doherty, M., Alkauskas, A., Meriles, C. A., & Menon, V. M. (2018). Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature. In 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings: QELS_Fundamental Science, CLEO_QELS 2018 (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/CLEO_QELS.2018.FTu4H.1

Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature. / Proscia, Nicholas V.; Shoton, Zav; Jayakumar, Harishankar et al.
2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings: QELS_Fundamental Science, CLEO_QELS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Proscia, NV, Shoton, Z, Jayakumar, H, Reddy, P, Dollar, M, Doherty, M, Alkauskas, A, Meriles, CA & Menon, VM 2018, Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature. in 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings: QELS_Fundamental Science, CLEO_QELS 2018. 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2018 Conference on Lasers and Electro-Optics, CLEO 2018, San Jose, United States, 5/13/18. https://doi.org/10.1364/CLEO_QELS.2018.FTu4H.1

Proscia NV, Shoton Z, Jayakumar H, Reddy P, Dollar M, Doherty M et al. Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature. In 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings: QELS_Fundamental Science, CLEO_QELS 2018. Institute of Electrical and Electronics Engineers Inc. 2018. (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings). doi: 10.1364/CLEO_QELS.2018.FTu4H.1

Proscia, Nicholas V. ; Shoton, Zav ; Jayakumar, Harishankar et al. / Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature. 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings: QELS_Fundamental Science, CLEO_QELS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings).

@inproceedings{714d47df4c1a40baab918722ba938a92,

title = "Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature",

abstract = "Room temperature quantum emitter arrays are created in hexagonal Boron Nitride (hBN) by deterministic activation via strain engineering on a nanopillar substrate. Emitters are localized at pillar edges where the hBN film undergoes maximum strain.",

author = "Proscia, \{Nicholas V.\} and Zav Shoton and Harishankar Jayakumar and Prithvi Reddy and Michael Dollar and Marcus Doherty and Audrius Alkauskas and Meriles, \{Carlos A.\} and Menon, \{Vinod M.\}",

note = "Publisher Copyright: {\textcopyright} 2018 OSA.; 2018 Conference on Lasers and Electro-Optics, CLEO 2018 ; Conference date: 13-05-2018 Through 18-05-2018",

year = "2018",

month = aug,

day = "6",

doi = "10.1364/CLEO\_QELS.2018.FTu4H.1",

language = "English (US)",

isbn = "9781943580422",

series = "2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings",

}

TY - GEN

T1 - Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature

AU - Proscia, Nicholas V.

AU - Shoton, Zav

AU - Jayakumar, Harishankar

AU - Reddy, Prithvi

AU - Dollar, Michael

AU - Doherty, Marcus

AU - Alkauskas, Audrius

AU - Meriles, Carlos A.

AU - Menon, Vinod M.

PY - 2018/8/6

Y1 - 2018/8/6

N2 - Room temperature quantum emitter arrays are created in hexagonal Boron Nitride (hBN) by deterministic activation via strain engineering on a nanopillar substrate. Emitters are localized at pillar edges where the hBN film undergoes maximum strain.

AB - Room temperature quantum emitter arrays are created in hexagonal Boron Nitride (hBN) by deterministic activation via strain engineering on a nanopillar substrate. Emitters are localized at pillar edges where the hBN film undergoes maximum strain.

UR - https://www.scopus.com/pages/publications/85052564317

UR - https://www.scopus.com/pages/publications/85052564317#tab=citedBy

U2 - 10.1364/CLEO_QELS.2018.FTu4H.1

DO - 10.1364/CLEO_QELS.2018.FTu4H.1

M3 - Conference contribution

AN - SCOPUS:85048940303

SN - 9781943580422

T3 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

BT - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018

Y2 - 13 May 2018 through 18 May 2018

ER -

Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature

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