Abstract
In this paper, molecular beam epitaxial growth of Ni2MnGa single crystal layers on GaAs (001) using a NiGa interlayer is reported. X-ray diffraction and transmission electron microscopy confirmed an epitaxial relationship of Ni2MnGa [100][010] // GaAs [100][010] and a tetragonal structure of the film (a = b = 5.79 angstrom, c = 6.07 angstrom). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers revealed an in-plane magnetization of approx. 200 emu/cm3 at room temperature and a Curie temperature of approx. 350 K. The martensitic phase transformation was observed to occur at approx. 250 K.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 297-302 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 604 |
| State | Published - 2000 |
| Event | Materials for Smart Systems III - Boston, MA, USA Duration: Nov 30 1999 → Dec 2 1999 |