Formation and characterization of single crystal Ni2MnGa thin films

J. W. Dong, L. C. Chen, S. McKernan, J. Q. Xie, M. T. Figus, R. D. James, C. J. Palmstrom

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations


In this paper, molecular beam epitaxial growth of Ni2MnGa single crystal layers on GaAs (001) using a NiGa interlayer is reported. X-ray diffraction and transmission electron microscopy confirmed an epitaxial relationship of Ni2MnGa [100][010] // GaAs [100][010] and a tetragonal structure of the film (a = b = 5.79 angstrom, c = 6.07 angstrom). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers revealed an in-plane magnetization of approx. 200 emu/cm3 at room temperature and a Curie temperature of approx. 350 K. The martensitic phase transformation was observed to occur at approx. 250 K.

Original languageEnglish (US)
Pages (from-to)297-302
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2000
EventMaterials for Smart Systems III - Boston, MA, USA
Duration: Nov 30 1999Dec 2 1999


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